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P2NA60 Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 P2NA60   PJP2NA60

PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. 600 V Current 2A (Halogen Free) Mechanical Data  Case : TO-251AB ,TO-220AB, ITO-220AB, TO-252 Package
Pan Jit
Pan Jit
datasheet P2NA60 pdf

P2N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P2NC60FP

STP2NC60FP

N-CHANNEL 600V - 7Ω - 1.9A - TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP2NC60 STP2NC60FP s s s s s STP2NC60 STP2NC60FP VDSS 600 V 600 V RDS(on) <8Ω <8Ω ID 1.9 A 1.9 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
ST Microelectronics
ST Microelectronics
datasheet P2NC60FP pdf
P2NA60

PJP2NA60

PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU
Pan Jit
Pan Jit
datasheet P2NA60 pdf
P2N60

STP2N60

STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP2N60 STP2N60FI s s s s s V DSS 600 V 600 V R DS( on) < 3.5 Ω < 3.5 Ω ID 2.9 A 2.2 A TYPICAL RDS(on) = 3.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVAL
STMicroelectronics
STMicroelectronics
datasheet P2N60 pdf
P2N80

FQP2N80

FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET tech
Fairchild Semiconductor
Fairchild Semiconductor
datasheet P2N80 pdf


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