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P2NA60 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 P2NA60   PJP2NA60

PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. 600 V Current 2A (Halogen Free) Mechanical Data  Case : TO-251AB ,TO-220AB, ITO-220AB, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams  ITO-220AB Approx. Weight : 0.
Pan Jit
Pan Jit
datasheet P2NA60 pdf

P2N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P2NC60FP

STP2NC60FP

N-CHANNEL 600V - 7Ω - 1.9A - TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP2NC60 STP2NC60FP s s s s s STP2NC60 STP2NC60FP VDSS 600 V 600 V RDS(on) <8Ω <8Ω ID 1.9 A 1.9 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
ST Microelectronics
ST Microelectronics
datasheet P2NC60FP pdf
P2NA60

PJP2NA60

PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU
Pan Jit
Pan Jit
datasheet P2NA60 pdf
P2N60

STP2N60

STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP2N60 STP2N60FI s s s s s V DSS 600 V 600 V R DS( on) < 3.5 Ω < 3.5 Ω ID 2.9 A 2.2 A TYPICAL RDS(on) = 3.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVAL
STMicroelectronics
STMicroelectronics
datasheet P2N60 pdf
P2N80

FQP2N80

FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET tech
Fairchild Semiconductor
Fairchild Semiconductor
datasheet P2N80 pdf
P2N04L03

SPB160N04S2L-03

SPB160N04S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID 40 2.7 160 P- TO263 -7-3 V mΩ A • Enhancement mode • Logic Level • High Current Rating • Low On-Resistance RDS(on) • 175°C operating temperature • Av
Infineon
Infineon
datasheet P2N04L03 pdf
P2N2222A

Amplifier Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2222A/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2222A MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Cont
Motorola  Inc
Motorola Inc
datasheet P2N2222A pdf
P2NA50FI

STP2NA50FI

STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P2NA50 ST P2NA50FI s s s s s s s V DSS 500 V 500 V R DS(o n) <4 Ω <4Ω ID 2. 8 A 2A TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETIT
STMicroelectronics
STMicroelectronics
datasheet P2NA50FI pdf
P2N2222A

Amplifier Transistors(NPN Silicon)

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous To
ON Semiconductor
ON Semiconductor
datasheet P2N2222A pdf


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