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P0903BTG Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
2 P0903BTG   N-Channel Enhancement Mode MOSFET

P0903BTG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current 1 TC = 25 °C TC = 100 °C ID IDM 64 40 150 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 64 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5 25 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-
UNIKC
UNIKC
datasheet P0903BTG pdf
1 P0903BTG   N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BTG TO-220 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 9.5m ID 50A G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VGS ID IDM IAR EAS EAR PD Tj, Tstg TL THERMAL RESISTANCE RATING
Niko
Niko
datasheet P0903BTG pdf


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