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NTP-7412S Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
177 NTP-8230   Power Driver Integrated Full Digital Audio Amplifier

Power Driver Integrated Full Digital Audio Amplifier NTP-8230 NTP-8230 High Performance, High Fidelity Power Driver Integrated Full Digital Audio Amplifier Datasheet Revision 0.1 Copyright ⓒ NeoFidelity, Inc. Document Number: DS8230 draft ver. 0.1 Page 1 2011-01-11 Free Datasheet http:/// Power Driver Integrated Full Digital Audio Amplifier NTP-8230 General Description The NTP-8230 is a single chip full digital audio amplifier including power stage for stereo amplifier system. NTP-8230 is integrated with versatile digital audio signal processing functions, highperformance, high-fidelity fully digital PWM modulato
NeoFidelity
NeoFidelity
datasheet NTP-8230 pdf
176 NTP10N40   Power MOSFET

NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified Typical Applications • Switch Mode Power Supplies • PWM Motor Controls • Converters • Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate V
ON Semiconductor
ON Semiconductor
datasheet NTP10N40 pdf
175 NTP125N02R   Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK

NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge http://onsemi.com 125 AMPERES, 24 VOLTS RDS(on) = 3.7 mW (Typ) D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @
ON Semiconductor
ON Semiconductor
datasheet NTP125N02R pdf
174 NTP125N02R   Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK

NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • Operation Low Ciss to Minimize Driver Loss Optimized Qgd and RDS(on) for Shoot−through Protection Low Gate Charge http://onsemi.com 125 AMPERES, 24 VOLTS RDS(on) = 3.7 mW (Typ) D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @
ON Semiconductor
ON Semiconductor
datasheet NTP125N02R pdf
173 NTP13N10   Power MOSFET

NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available VDSS 100 V http://onsemi.com RDS(ON) TYP 165 mΩ @ 10 V N−Channel D ID MAX 13 A Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous
ON Semiconductor
ON Semiconductor
datasheet NTP13N10 pdf
172 NTP18N06   Power MOSFET

NTP18N06, NTB18N06 Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. N−Channel Typical Applications D V(BR)DSS 60 V G S http://onsemi.com RDS(on) TYP 90 mW @ 10 V ID MAX 15 A • • • • • Power Supplies Converters Power Motor Controls Bridge Circuits Pb−Free Packages are Available 4 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 mW) Gate−to−Source Voltage − Continuous − Non−Repetitiv
ON Semiconductor
ON Semiconductor
datasheet NTP18N06 pdf
171 NTP18N06L   Power MOSFET

NTP18N06L, NTB18N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com • • • • Power Supplies Converters Power Motor Controls Bridge Circuits 15 AMPERES 60 VOLTS RDS(on) = 100 mW N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 mW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp v 10 ms) Drain Current − Con
ON Semiconductor
ON Semiconductor
datasheet NTP18N06L pdf
170 NTP22N06   Power MOSFET

NTP22N06, NTB22N06 Power MOSFET 22 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 μs) Total Power Dissipa
ON Semiconductor
ON Semiconductor
datasheet NTP22N06 pdf
169 NTP22N06L   Power MOSFET

NTP22N06L, NTB22N06L Power MOSFET 22 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 μ
ON Semiconductor
ON Semiconductor
datasheet NTP22N06L pdf
168 NTP27N06   Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK

NTP27N06, NTB27N06 Power MOSFET 27 Amps, 60 Volts N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features http://onsemi.com • • • • • • • • Higher Current Rating Lower RDS(on) Lower VDS(on) Lower Capacitances Power Supplies Converters Power Motor Controls Bridge Circuits 27 AMPERES 60 VOLTS RDS(on) = 46 mΩ N–Channel D Typical Applications MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 10 MΩ) Gate–to–Source Voltage – Contin
ON Semiconductor
ON Semiconductor
datasheet NTP27N06 pdf


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