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N01L163WN1A Datasheet ( PDF )

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1 N01L163WN1A   1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L163WN1A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L163WN1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB)
NanoAmp Solutions
NanoAmp Solutions
datasheet N01L163WN1A pdf

N01L163WN1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
N01L163WN1A

1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit

NanoAmp Solutions
NanoAmp Solutions
datasheet N01L163WN1A pdf


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