N01L163WN1A Datasheet ( Hoja de datos ) - DataSheet.es

N01L163WN1A Datasheet ( Hoja de datos )


N01L163WN1A Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 N01L163WN1A  N01L163WN1A Hoja de datos PDF - NanoAmp Solutions

1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit


NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L163WN1A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L163WN1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low p
NanoAmp Solutions
NanoAmp Solutions
PDF


N01L163WN1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
N01L163WN1A  N01L163WN1A Hoja de datos - NanoAmp Solutions 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L163WN1A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L163WN1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low p
NanoAmp Solutions
NanoAmp Solutions
PDF




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