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ME4856 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
2 ME4856   N-Channel 30-V(D-S) MOSFET

N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. ME4856 FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.5V ● Super high density c
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datasheet ME4856 pdf
1 ME4856-G   N-Channel 30-V(D-S) MOSFET

N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4856/ME4856-G FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)
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datasheet ME4856-G pdf


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