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MDS3604 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 MDS3604   Single P-Channel Trench MOSFET

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ General Description The MDS3604 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS = -30V ID = -11A @VGS = -10V RDS(ON) < 10.0mΩ @VGS = -20V < 12.1mΩ @VGS = -10V < 18.3mΩ @VGS = -5V Applications Load Switch General purpose applications Smart Module for Note PC Battery 6(D) 7(D) 8(D) 5(D) D 2(S) 1(S) 4(G) 3(S) G S Absolute Maximum
MagnaChip
MagnaChip
datasheet MDS3604 pdf

MDS3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
MDS3604

Single P-Channel Trench MOSFET

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ General Description The MDS3604 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Manageme
MagnaChip
MagnaChip
datasheet MDS3604 pdf
MDS3652

Single P-Channel Trench MOSFET

MDS3652– Single P-Channel Trench MOSFET MDS3652 Single P-Channel Trench MOSFET, -30V, -11A, 17mΩ General Description The MDS3652 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features
MagnaChip
MagnaChip
datasheet MDS3652 pdf
MDS35-1200

DIODE / SCR MODULE

MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power
ST Microelectronics
ST Microelectronics
datasheet MDS35-1200 pdf
MDS3653

Single P-Channel Trench MOSFET

MDS3653– Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ MDS3653 Single P-Channel Trench MOSFET, -30V, -14.6A, 7mΩ General Description The MDS3653 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management
MagnaChip
MagnaChip
datasheet MDS3653 pdf
MDS35-800

DIODE / SCR MODULE

MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power
ST Microelectronics
ST Microelectronics
datasheet MDS35-800 pdf
MDS3753E

P-channel Trench MOSFET

MDS3753E– P-Channel Trench MOSFET MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ General Description The MDS3753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Low RDS(ON) and low g
MagnaChip
MagnaChip
datasheet MDS3753E pdf
MDS3603

P-Channel Trench MOSFET

MDS3603– Single P-Channel Trench MOSFET MDS3603 Single P-Channel Trench MOSFET, -30V, -12A, 10.1mΩ General Description The MDS3603 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching
MagnaChip
MagnaChip
datasheet MDS3603 pdf
MDS35

DIODE / SCR MODULE

MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power
ST Microelectronics
ST Microelectronics
datasheet MDS35 pdf


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