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MDF8N60 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
2 MDF8N60   N-Channel MOSFET

MDF8N60 N-channel MOSFET 600V MDF8N60 N-Channel MOSFET 600V, 8A, 1.0Ω General Description The MDF8N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF8N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 8.0A RDS(ON) ≤ 1.0Ω Applications @ Tjmax @ VGS = 10V @ VGS = 10V Power Supply PFC High Current, High Speed Switching G DS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Curr
MagnaChip
MagnaChip
datasheet MDF8N60 pdf
1 MDF8N60B   N-Channel Trench MOSFET

MDF8N60B N-channel MOSFET 600V MDF8N60B N-Channel MOSFET 600V, 8A, 1.05Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 8.0A RDS(ON) ≤ 1.05Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching G DS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(※) Pulsed Dr
MagnaChip
MagnaChip
datasheet MDF8N60B pdf


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