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K1053 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 K1053   2SK1053

Ordering number:EN3440 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1053] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter
Sanyo
Sanyo
datasheet K1053 pdf

K1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
K12A50D

TK12A50D

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS =
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K12A50D pdf
K10A60D

TK10A60D

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (
Toshiba
Toshiba
datasheet K10A60D pdf
K10A50D

TK10A50D

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) Low leakage current: ID
Toshiba
Toshiba
datasheet K10A50D pdf
K15A50D

TK15A50D

Datasheet.es TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK15A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low lea
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K15A50D pdf
K1317

2SK1317

2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and m
Hitachi Semiconductor
Hitachi Semiconductor
datasheet K1317 pdf
K1117

2SK1117

ETC
ETC
datasheet K1117 pdf
K1118

2SK1118

Toshiba
Toshiba
datasheet K1118 pdf
K1413

2SK1413

Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. Package Dim
Sanyo Semicon Device
Sanyo Semicon Device
datasheet K1413 pdf


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