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K105 Hoja de datos ( Datasheet )


K105 Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
10 K105    2SK105

D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process Parameters Conditions Unit Limit 2SK17 IFN17 NJ16 N Channel 2SK40 IFN40 NJ16 N Channel 2SK59 IFN59 NJ16 N Channel 2SK105 IFN105 NJ16 N Channel BVGSS IGSS VGS(off) IDSS gfs Ciss Crss IG = – 1.0 µA VGS = ( ), VDS = Ø VDS = ( ), ID = 1.0 nA VDS = ( ), VGS = Ø VDS = ( ), VGS = Ø VGS = ( ), VDS = ( ) VGS = ( ), VDS = ( ) V Min nA Max V Min/Max mA Min/Max mS Typ pF Typ pF Typ – 20 0.10 (–10 V) – 0.5/– 6.0 (10 V) 0.3/6.5 (10 V) 2.0 (10 V) 4.0 (Ø) (Ø) 1.2 (– 10 V) (Ø) TO-226AA SGD – 50 1.0
InterFET
InterFET
datasheet K105 pdf
9 K1050E70   silicon bilateral voltage triggered switch

Thyristor Product Catalog Teccor Electronics 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Website: http://www.teccor.com E-mail: power.techsales@teccor.com ©2002 Teccor Electronics Thyristor Product Catalog i http://www.teccor.com +1 972-580-7777 Teccor Electronics reserves the right to make changes at any time in order to improve designs and to supply the best products possible. The information in this catalog has been carefully checked and is believed to be accurate and reliable; however, no liability of any type shall be incurred by Teccor for the use of the circuits or devic
Teccor
Teccor
datasheet K1050E70 pdf
8 K1050F70   Thyristor Product Catalog

Thyristor Product Catalog Teccor Electronics 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Website: http://www.teccor.com E-mail: power.techsales@teccor.com ©2002 Teccor Electronics Thyristor Product Catalog i http://www.teccor.com +1 972-580-7777 Teccor Electronics reserves the right to make changes at any time in order to improve designs and to supply the best products possible. The information in this catalog has been carefully checked and is believed to be accurate and reliable; however, no liability of any type shall be incurred by Teccor for the use of the circuits or devic
Teccor
Teccor
datasheet K1050F70 pdf
7 K1050G   silicon bilateral voltage triggered switch

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on through a negative resistance region to a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the device. Teccor offers the complete voltage range (95-330) over three different
Teccor
Teccor
datasheet K1050G pdf
6 K1050G70   Thyristor Product Catalog

Thyristor Product Catalog Teccor Electronics 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Website: http://www.teccor.com E-mail: power.techsales@teccor.com ©2002 Teccor Electronics Thyristor Product Catalog i http://www.teccor.com +1 972-580-7777 Teccor Electronics reserves the right to make changes at any time in order to improve designs and to supply the best products possible. The information in this catalog has been carefully checked and is believed to be accurate and reliable; however, no liability of any type shall be incurred by Teccor for the use of the circuits or devic
Teccor
Teccor
datasheet K1050G70 pdf
5 K1050S   silicon bilateral voltage triggered switch

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on through a negative resistance region to a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the device. Teccor offers the complete voltage range (95-330) over three different
Teccor
Teccor
datasheet K1050S pdf
4 K1050S70   Thyristor Product Catalog

Thyristor Product Catalog Teccor Electronics 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Website: http://www.teccor.com E-mail: power.techsales@teccor.com ©2002 Teccor Electronics Thyristor Product Catalog i http://www.teccor.com +1 972-580-7777 Teccor Electronics reserves the right to make changes at any time in order to improve designs and to supply the best products possible. The information in this catalog has been carefully checked and is believed to be accurate and reliable; however, no liability of any type shall be incurred by Teccor for the use of the circuits or devic
Teccor
Teccor
datasheet K1050S70 pdf
3 K1052   2SK1052

Ordering number:EN3439 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1052] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter
Sanyo
Sanyo
datasheet K1052 pdf
2 K1053   2SK1053

Ordering number:EN3440 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1053] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter
Sanyo
Sanyo
datasheet K1053 pdf
1 K1058   2SK1058

2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1 2 3 S REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00 Sep 07, 2005 1. Gate 2. Source (Flange) 3. Drain Rev.2.00 Sep 07, 2005 page 1 of 5 2SK1056, 2SK1057, 2SK1058 Absolute Maximum Ratings
Renesas Technology
Renesas Technology
datasheet K1058 pdf


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