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K100UF Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 K100UF   Spice Model

Spice Model K100UF Electrical Characteristics and Maximum Ratings Part Working Number Reverse Voltage (Vrwm) Average Rectified Current (Io) Reverse Current @ Vrwm (Ir) Forward Voltage 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms (3) (Ifsm) (Ifrm) (Trr) 25°C A Amps 25°C Amps 25°C ns Thermal Impedance Junction Cap. @50VDC @1kHZ (Cj) (Vf) 25°C Volts θJ-L L=.000 L=.250 °C/W °C/W 55°C(1) 100°C(2) 25°C 100°C Volts K100UF Amps Amps µA µA pF 10000 1.5 0.75 2.0 100 14.0 1.5 100 25 100 2 4.5 35 .250 ±.015 .375 ±.015 .40(10.16) .093 ±.003 Name IS N T RS TT C J0
VMI
VMI
datasheet K100UF pdf

K10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
K10A60D

TK10A60D

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (
Toshiba
Toshiba
datasheet K10A60D pdf
K10A50D

TK10A50D

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) Low leakage current: ID
Toshiba
Toshiba
datasheet K10A50D pdf
K10T60

IGBT

TrenchStop® Series IKP10N60T p Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short
Infineon Technologies
Infineon Technologies
datasheet K10T60 pdf
K1060

2SK1060

NEC
NEC
datasheet K1060 pdf
K10A60W

TK10A60W

Preliminary TK10A60W TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK10A60W Switching Regulator Applications • Low drain-source on-resistance : RDS (ON) = 0.327 by used to Super Junction Structure : DTMOS (typ.) • Easy to control Gate switching
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K10A60W pdf
K105

2SK105

D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process Parameters Conditions Unit Limit 2SK17 IFN17 NJ16 N Channel 2SK40 IFN40 NJ16 N Channel 2SK59 IFN59 NJ16 N Channel 2SK105 IFN105 NJ16 N Channel
InterFET
InterFET
datasheet K105 pdf
K1058

2SK1058

2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good compl
Renesas Technology
Renesas Technology
datasheet K1058 pdf
K1024

2SK1024

Fuji Electric
Fuji Electric
datasheet K1024 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
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TD357EG

This electronic part is N-Channel Enhancement Mode MOSFET.

UNIKC
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TD381BA

This electronic part is N-Channel Enhancement Mode MOSFET.

UNIKC
UNIKC
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UTC2SC1384

The UTC 2SC1384 is power amplifier and driver.

Unisonic Technologies
Unisonic Technologies
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