Datasheet ( Hoja de datos ) - DataSheet.es

J111 Hoja de datos ( Datasheet )


J111 Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
11 J111   N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbo
NXP
NXP
datasheet J111 pdf
10 J111   N-Channel Switch

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering Information Part Number J111 J111_D26Z J111_D74Z J112 J112_D26Z J112_D27Z J112_D74Z J113 J113_D74Z J113_D75Z MMBFJ111 MMBFJ112 MMBFJ113 Top Mark J111 J111 J111 J112 J112 J112 J112 J113 J113 J113 6P 6R 6S G SOT-23 S Note: So
Fairchild Semiconductor
Fairchild Semiconductor
datasheet J111 pdf
9 J111   N-Channel JFET Switch

N-Channel JFET Switch CORPORATION J111 - J113 / SST111 – SST113 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltage Generated By Closed Switch Purely Resistive High Isolation Resistance From Driver Fast Switching Short Sample and Hold Aperture Time • • • • • • APPLICATIONS Analog Switches Choppers Commutators • • • - PIN CONFIGURATION SOT-23 G TO-92 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -35V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temp
Calogic  LLC
Calogic LLC
datasheet J111 pdf
8 J111   N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS

Micro Electronics
Micro Electronics
datasheet J111 pdf
7 J111   SINGLE N-CHANNEL JFET

J/SST111 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J) Continuous Power Dissipation (SST) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -35V -35V 50mA 360mW 350mW -55 to 150°C -55 to 135°C D S G 1 2 3 TO 92 SINGLE N-CHANNEL JFET 5pA 4ns J SERIES TO-92 BOTTOM VIEW SST SERIES SOT-23 TOP VIEW D S 1 3 2 G STATIC ELECTRICAL CHARACTERISTICS
Linear Integrated Systems
Linear Integrated Systems
datasheet J111 pdf
6 J111   N-Channel JFETs

J/SST111 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) J/SST111 J/SST112 J/SST113 –3 to –10 –1 to –5 v–3 30 50 100 ID(off) Typ (pA) 5 5 5 tON Typ (ns) 4 4 4 J111 SST111 J112 SST112 J113 SST113 FEATURES D Low On-Resistance: 111 < 30 W D Fast Switching—tON: 4 ns D Low Leakage: 5 pA D Low Capacitance: 3 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good Frequency Response, Low Glitches D Eliminates Additional Buffering APPLICATIONS D Analog Switches D Choppers D Sample-and-Ho
Vishay
Vishay
datasheet J111 pdf
5 J111   JFET CHOPPER

Jill J112 J113 CASE 29-02, STYLE 5 TO-92 (TO-226AA) JFET CHOPPER —N-CHANNEL DEPLETION MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/ = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG Vgs 'G PD tl TJ- T stg Value -35 -35 50 625 5.68 300 - 55 to + 1 50 Unit Vdc Vdc mA mW mW/°C °C °C ELECTRICAL CHARACTERISTICS
Motorola
Motorola
datasheet J111 pdf
4 J111   (J111 / J112) JFET Chopper Transistors N-Channel

J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above = 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value −35 −35 50 350 2.8 300 −65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C http://onsemi.com 1 DRAIN 3 GATE 2 SOURCE Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not no
ON Semiconductor
ON Semiconductor
datasheet J111 pdf
3 J111   Switching

J111 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J111 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J111  LOW GATE LEAKAGE CURRENT  5pA  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  J111 Benefits: Operating Junction Temperature
Micross
Micross
datasheet J111 pdf
2 J111   Trans JFET N-CH 3-Pin TO-92 Bulk

New Jersey Semiconductor
New Jersey Semiconductor
datasheet J111 pdf


Enlace url :
[1] [2] 

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF
TD357EG

This electronic part is N-Channel Enhancement Mode MOSFET.

UNIKC
UNIKC
PDF
TD381BA

This electronic part is N-Channel Enhancement Mode MOSFET.

UNIKC
UNIKC
PDF
UTC2SC1384

The UTC 2SC1384 is power amplifier and driver.

Unisonic Technologies
Unisonic Technologies
PDF


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z






www.DataSheet.es    |  2017    |  Contacto   |   English