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J110A Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 J110A   N-Channel Silicon Junction Field-Effect Transistor

B-50 01/99 J110, J110A N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 25 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate +
InterFET Corporation
InterFET Corporation
datasheet J110A pdf

J1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
J13009

FJP13009

FJP13009 High Voltage Fast-Switching NPN Power Transistor March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-22
Fairchild Semiconductor
Fairchild Semiconductor
datasheet J13009 pdf
J13003

Mini Size Discrete Semiconductor Elements

Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge (Single phase / Three phase) RF ( low capacitance ) & Varactor
Sinyork
Sinyork
datasheet J13003 pdf
J117

2SJ117

2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC
Hitachi Semiconductor
Hitachi Semiconductor
datasheet J117 pdf
J111

N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symm
NXP
NXP
datasheet J111 pdf
J112

N-Channel Switch

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized ampli
Fairchild Semiconductor
Fairchild Semiconductor
datasheet J112 pdf
J175

P-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification P-channel silicon field-effect transistors DESCRIPTI
NXP
NXP
datasheet J175 pdf
J105

N-Channel JFETs

J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J105 J106 J107 VGS(off) (V) –4.5 to –10 –2 to –6 –0.5 to –4.5 rDS(on) Max (W) 3 6 8 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 14 14 14 FEATURES D D D D D Low On-Resistance: J105 < 3 W Fast S
Vishay Telefunken
Vishay Telefunken
datasheet J105 pdf
J113

N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symm
NXP
NXP
datasheet J113 pdf


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Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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