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J110 Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
9 J110   N-channel silicon junction FETs

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage (<8 Ω for J108). APPLICATIONS • Analog switches • Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source in
NXP
NXP
datasheet J110 pdf
8 J110   N-Channel Switch

J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 3 1 TO-92 1. Drain 2. Source 3. Gate 2 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forward Gate Current TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 25 -25 10 -55 ~ +150
Fairchild Semiconductor
Fairchild Semiconductor
datasheet J110 pdf
7 J110   N-Channel JFET Switch

N-Channel JFET Switch CORPORATION J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver Fast Switching Low Noise • • • • • • APPLICATIONS Analog Switches Choppers Commutators Low-Noise Audio Amplifiers • • • • PIN CONFIGURATION SOT-23 G TO-92 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storag
Calogic  LLC
Calogic LLC
datasheet J110 pdf
6 J110   N-Channel Silicon Junction Field-Effect Transistor

B-50 01/99 J110, J110A N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 25 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate +
InterFET Corporation
InterFET Corporation
datasheet J110 pdf
5 J110   JFET - General Purpose N-Channel

J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers. Features http://onsemi.com 1 DRAIN • • • • • • • • N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ) Pb−Free Packages are Available* 3 GATE 2 SOURCE MARKING DIAGRAM MAXIMUM RATINGS Rating Gate−Source Voltage Drain −Gate Voltage Gate
ON Semiconductor
ON Semiconductor
datasheet J110 pdf
4 J110   Switching

J110 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J110 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J110  LOW ON RESISTANCE  rDS(on) ≤ 18Ω  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  J110 Benefits: Operating Junction Tempe
Micross
Micross
datasheet J110 pdf
3 J110   JFET GENERAL-PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total Device Dissipation (a T/ = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGS "G PD Tj Tstg Value -25 -25 10 310 2.82 135 -65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C J107, J108 J109, J110 CASE 29-02, STYLE 5 TO-92 (TO-226AA) JFET GENERAL-PURPOSE TRANSISTOR —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (VDS = 0, Iq = -10 MAdc) Gate Reverse Current (VG S = -15 Vdc, VDS = 0) (Vqs = -15 Vdc, VDs = 0, TA =
Motorola
Motorola
datasheet J110 pdf
2 J110   N-Channel JFETs

J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2 to –6 –0.5 to –4 rDS(on) Max (W) 8 12 18 ID(off) Typ (pA) 20 20 20 tON Typ (ns) 4 4 4 SST108 SST109 SST110 FEATURES D Low On-Resistance: J108 <8 W D Fast Switching—tON: 4 ns D Low Leakage: 20 pA D Low Capacitance: 11 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error” Excellent Accuracy D Good Frequency Response D Eliminates Additional Buffering APPLICATIONS D Analog Switches D Choppers D Sample-and-Hold
Vishay
Vishay
datasheet J110 pdf
1 J110A   N-Channel Silicon Junction Field-Effect Transistor

B-50 01/99 J110, J110A N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 25 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate +
InterFET Corporation
InterFET Corporation
datasheet J110A pdf


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