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J108 Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
9 J108   N-channel silicon junction FETs

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage (<8 Ω for J108). APPLICATIONS • Analog switches • Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source in
NXP
NXP
datasheet J108 pdf
8 J108   N-Channel Switch

J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 3 1 TO-92 1. Drain 2. Source 3. Gate 2 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forward Gate Current TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 25 -25 10 -55 ~ +150
Fairchild Semiconductor
Fairchild Semiconductor
datasheet J108 pdf
7 J108   N-Channel JFET Switch

N-Channel JFET Switch CORPORATION J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver Fast Switching Low Noise • • • • • • APPLICATIONS Analog Switches Choppers Commutators Low-Noise Audio Amplifiers • • • • PIN CONFIGURATION SOT-23 G TO-92 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storag
Calogic  LLC
Calogic LLC
datasheet J108 pdf
6 J108   LOW NOISE SINGLE N-CHANNEL JFET SWITCH

J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain or Source -25V 50mA 350mW -55 to 150°C -55 to 150°C rDS(on) ≤ 8Ω tON ≤ 4ns N-CHANNEL JFET SWITCH J SERIES TO-92 BOTTOM VIEW SST SERIES SOT-23 TOP VIEW D 1 3 D S G 1 2 3 G S 2 STATIC ELECTRICAL CHARACTERISTICS @25 °C (unl
Linear Integrated Systems
Linear Integrated Systems
datasheet J108 pdf
5 J108   N-CHANNEL JFET

J108 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J108 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J108  LOW ON RESISTANCE  rDS(on) ≤ 8Ω  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  J108 Benefits: Operating Junction Temper
Micross
Micross
datasheet J108 pdf
4 J108   2SJ108

Toshiba
Toshiba
datasheet J108 pdf
3 J108   JFET GENERAL-PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total Device Dissipation (a T/ = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGS "G PD Tj Tstg Value -25 -25 10 310 2.82 135 -65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C J107, J108 J109, J110 CASE 29-02, STYLE 5 TO-92 (TO-226AA) JFET GENERAL-PURPOSE TRANSISTOR —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (VDS = 0, Iq = -10 MAdc) Gate Reverse Current (VG S = -15 Vdc, VDS = 0) (Vqs = -15 Vdc, VDs = 0, TA =
Motorola
Motorola
datasheet J108 pdf
2 J108   N-Channel JFETs

J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2 to –6 –0.5 to –4 rDS(on) Max (W) 8 12 18 ID(off) Typ (pA) 20 20 20 tON Typ (ns) 4 4 4 SST108 SST109 SST110 FEATURES D Low On-Resistance: J108 <8 W D Fast Switching—tON: 4 ns D Low Leakage: 20 pA D Low Capacitance: 11 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error” Excellent Accuracy D Good Frequency Response D Eliminates Additional Buffering APPLICATIONS D Analog Switches D Choppers D Sample-and-Hold
Vishay
Vishay
datasheet J108 pdf
1 J108-110   N-Channel JFET Switch

N-Channel JFET Switch CORPORATION J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver Fast Switching Low Noise • • • • • • APPLICATIONS Analog Switches Choppers Commutators Low-Noise Audio Amplifiers • • • • PIN CONFIGURATION SOT-23 G TO-92 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storag
Calogic  LLC
Calogic LLC
datasheet J108-110 pdf


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