DataSheet.es H04N60 Hoja de datos

H04N60 Hoja de datos ( Datasheet )


H04N60 Datasheet ( Hojas de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 H04N60  H04N60 Hoja de datos PDF - Hi-Sincerity Mocroelectronics

N-Channel Power Field Effect Transistor


www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 H04N60 Series N-Channel Power Field Effect Transistor H04N60 Series Pin Assignment Tab Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switchin
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
PDF



H04N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
H04N60  H04N60 Hoja de datos - Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor

www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 H04N60 Series N-Channel Power Field Effect Transistor H04N60 Series Pin Assignment Tab Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switchin
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
PDF



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