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H04N60 Hoja de datos ( Datasheet )


H04N60 Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 H04N60   N-Channel Power Field Effect Transistor

www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 H04N60 Series N-Channel Power Field Effect Transistor H04N60 Series Pin Assignment Tab Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
datasheet H04N60 pdf

H04 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
H04N60

N-Channel Power Field Effect Transistor

www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 H04N60 Series N-Channel Power Field Effect Transistor H04N60 Series Pin Assignment Tab Description This advanced high voltage MOSFE
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
datasheet H04N60 pdf


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