DataSheet.es H03N60 Hoja de datos

H03N60 Hoja de datos ( Datasheet )


H03N60 Datasheet ( Hojas de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 H03N60  H03N60 Hoja de datos PDF - Hi-Sincerity Mocroelectronics

N-Channel Power Field Effect Transistor


HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation m
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
PDF



H03N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
H03N60  H03N60 Hoja de datos - Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation m
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
PDF



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