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H03N60 Datasheet ( PDF )

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1 H03N60   N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching a
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
datasheet H03N60 pdf

H03N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
H03N60

N-Channel Power Field Effect Transistor

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
datasheet H03N60 pdf


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