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H02N60SF Hoja de datos ( Datasheet )


H02N60SF Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 H02N60SF   N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor
HI-SINCERITY
HI-SINCERITY
datasheet H02N60SF pdf

H02N60S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
H02N60S

N-Channel Power Field Effect Transistor

HI-SINCERITY
HI-SINCERITY
datasheet H02N60S pdf
H02N60SI

N-Channel Power Field Effect Transistor

HI-SINCERITY
HI-SINCERITY
datasheet H02N60SI pdf
H02N60SJ

N-Channel Power Field Effect Transistor

HI-SINCERITY
HI-SINCERITY
datasheet H02N60SJ pdf
H02N60SF

N-Channel Power Field Effect Transistor

HI-SINCERITY
HI-SINCERITY
datasheet H02N60SF pdf
H02N60SE

N-Channel Power Field Effect Transistor

HI-SINCERITY
HI-SINCERITY
datasheet H02N60SE pdf


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