DataSheet.es H02N60SF Hoja de datos

H02N60SF Hoja de datos ( Datasheet )


H02N60SF Datasheet ( Hojas de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 H02N60SF  H02N60SF Hoja de datos PDF - HI-SINCERITY

N-Channel Power Field Effect Transistor


HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a dra
HI-SINCERITY
HI-SINCERITY
PDF



H02N60S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
H02N60SJ  H02N60SJ Hoja de datos - HI-SINCERITY N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a dra
HI-SINCERITY
HI-SINCERITY
PDF
H02N60SF  H02N60SF Hoja de datos - HI-SINCERITY N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a dra
HI-SINCERITY
HI-SINCERITY
PDF
H02N60S  H02N60S Hoja de datos - HI-SINCERITY N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a dra
HI-SINCERITY
HI-SINCERITY
PDF
H02N60SI  H02N60SI Hoja de datos - HI-SINCERITY N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a dra
HI-SINCERITY
HI-SINCERITY
PDF
H02N60SE  H02N60SE Hoja de datos - HI-SINCERITY N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a dra
HI-SINCERITY
HI-SINCERITY
PDF



Enlace url :
[1] 

nuevas actualizaciones
[ 10N15 ]   [ 12P10 ]   [ 1N40 ]   [ 22N20 ]   [ 2N40 ]   [ 3N40 ]   [ 4N40 ]   [ 5052H ]   [ 5N40 ]   [ 6N10 ]   [ 7N10 ]   [ BU21077MUV ]   [ ESD218-B1 ]   [ IDW20C65D2 ]   [ IDW30C65D1 ]   [ IDW30C65D2 ]   [ IDW60C65D1 ]   [ IDW75D65D1 ]   [ IDW80C65D1 ]   [ IDW80C65D2 ]   [ IGP40N65F5 ]   [ IGP40N65H5 ]   [ IGW30N65L5 ]  

Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z




www.DataSheet.es    |  2017    |  Contacto   |   English