DataSheet.es H01N60 Hoja de datos

H01N60 Hoja de datos ( Datasheet )


H01N60 Datasheet ( Hojas de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 H01N60  H01N60 Hoja de datos PDF - HI-SINCERITY

N-Channel Power Field Effect Transistor


HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switch
HI-SINCERITY
HI-SINCERITY
PDF



H01N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
H01N60  H01N60 Hoja de datos - HI-SINCERITY N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switch
HI-SINCERITY
HI-SINCERITY
PDF



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