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H01N60 Hoja de datos ( Datasheet )


H01N60 Datasheet ( PDF )

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1 H01N60   N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode spee
HI-SINCERITY
HI-SINCERITY
datasheet H01N60 pdf

H01N6 Datasheet ( Hoja de datos ) - resultados coincidentes

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H01N60

N-Channel Power Field Effect Transistor

HI-SINCERITY
HI-SINCERITY
datasheet H01N60 pdf


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