Datasheet ( Hoja de datos ) - DataSheet.es


G4BC20UD Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 G4BC20UD   IRG4BC20UD

PD 91449B IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-cha nn el Benefits • Generation -4 IGBTs offer highest eff
International Rectifier
International Rectifier
datasheet G4BC20UD pdf

G4BC2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
G4BC20KD

IRG4BC20KD

PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 I
International Rectifier
International Rectifier
datasheet G4BC20KD pdf
G4BC20FD

IRG4BC20FD

PD 91601A IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter para
International Rectifier
International Rectifier
datasheet G4BC20FD pdf
G4BC20UD

IRG4BC20UD

PD 91449B IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter para
International Rectifier
International Rectifier
datasheet G4BC20UD pdf
G4BC20F

IRG4BC20F

PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher effi
International Rectifier
International Rectifier
datasheet G4BC20F pdf
G4BC20U

IRG4BC20U

PD - 91448D INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20U UltraFast Speed IGBT Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher e
International Rectifier
International Rectifier
datasheet G4BC20U pdf


Enlace url :
[1] 

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF
TD357EG

This electronic part is N-Channel Enhancement Mode MOSFET.

UNIKC
UNIKC
PDF
TD381BA

This electronic part is N-Channel Enhancement Mode MOSFET.

UNIKC
UNIKC
PDF
UTC2SC1384

The UTC 2SC1384 is power amplifier and driver.

Unisonic Technologies
Unisonic Technologies
PDF


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z






www.DataSheet.es    |  2017    |  Contacto