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FDH Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
31 FDH   High Conductance Low Leakage Diode

FDH300/A / FDLL300/A / FDH333 / FDLL333 Discrete POWER & Signal Technologies FDH/FDLL 300/A / 333 COLOR BAND MARKING DEVICE FDLL300 FDLL300A 1ST BAND BROWN BROWN BROWN 2ND BAND GREEN YELLOW BLUE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL333 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25°C unless otherwise noted Parameter Value 125 200 500 600 1.0 4
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDH pdf
30 FDH038AN08A1   N-Channel PowerTrench MOSFET

FDH038AN08A1 February 2003 FDH038AN08A1 N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ Features • r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.) • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82690 SOURCE DRAIN GATE G D Applications • 42V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steering Systems • Electronic Valve Train Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VR
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDH038AN08A1 pdf
29 FDH047AN08A0   N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82684 Applications • 42V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steering Systems • Electronic Valve Train Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDH047AN08A0 pdf
28 FDH055N15A   MOSFET

FDH055N15A — N-Channel PowerTrench® MOSFET March 2015 FDH055N15A N-Channel PowerTrench® MOSFET 150 V, 167 A, 5.9 mΩ Features • RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Sever / Telec
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDH055N15A pdf
27 FDH1000   High Conductance Switching Diodes

Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDH1000 pdf
26 FDH1040   Fixed Inductors

Fixed Inductors for Surface Mounting FDH1040/FDH1040B Inductance Range: 0.36~0.56µH DIMENSIONS FDH1040 11.2 4.0 Max. 2.55 (6.0) 2.55 FDH1040B 11.3 4.0 Max. 2.35 (6.6) 2.35 10.2 10.2 7.5 4.0 Tolerance : ±0.3 (Unit: mm) Recommended patterns FDH1040 FDH1040B 8.1 4.1 5.4 4.1 (Unit: mm) 3.8 6.0 3.8 (Unit: mm) FEATURES 11.3×10.2mm square and 4.0mm Max. height. Magnetically shielded construction low DC resistance. Suitable for large current The use of magnetic metal alloy powder ensure capability For large current and compact size. • Low audible core noise. • Ideal for DC-DC converter applications in hand
TOKO
TOKO
datasheet FDH1040 pdf
25 FDH1040B   Fixed Inductors

Fixed Inductors for Surface Mounting FDH1040/FDH1040B Inductance Range: 0.36~0.56µH DIMENSIONS FDH1040 11.2 4.0 Max. 2.55 (6.0) 2.55 FDH1040B 11.3 4.0 Max. 2.35 (6.6) 2.35 10.2 10.2 7.5 4.0 Tolerance : ±0.3 (Unit: mm) Recommended patterns FDH1040 FDH1040B 8.1 4.1 5.4 4.1 (Unit: mm) 3.8 6.0 3.8 (Unit: mm) FEATURES 11.3×10.2mm square and 4.0mm Max. height. Magnetically shielded construction low DC resistance. Suitable for large current The use of magnetic metal alloy powder ensure capability For large current and compact size. • Low audible core noise. • Ideal for DC-DC converter applications in hand
TOKO
TOKO
datasheet FDH1040B pdf
24 FDH15N50   15A/ 500V/ 0.38 Ohm/ N-Channel SMPS Power MOSFET

FDH15N50 / FDP15N50 / FDB15N50 August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Buck Converter • High Speed Switching Features • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Package SOURCE DRAIN GATE GA
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDH15N50 pdf
23 FDH20N40   20A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFET

FDH20N40 / FDP20N40 October 2002 FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Buck Converter • High Speed Switching Features • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Package JEDEC TO-247 SOURCE DRAIN GATE Symbol J
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDH20N40 pdf
22 FDH210N08   N-Channel UniFET MOSFET

FDH210N08 — N-Channel UniFETTM MOSFET FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features • RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A • Low Gate Charge (Typ. 232 nC) • Low Crss (Typ. 262 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies December 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDH210N08 pdf


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