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D1001UK Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 D1001UK   GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 DA PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 5.71 9.52 6.60 0.13 4.32 2.54 20.32 PIN 2 PIN 4 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 DRAIN GATE Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260
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datasheet D1001UK pdf

D100 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
D1002UK

METAL GATE RF SILICON FET

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975
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datasheet D1002UK pdf
D1008UK

METAL GATE RF SILICON FET

TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND
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datasheet D1008UK pdf
D1001UK

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW
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datasheet D1001UK pdf
D10040230PL1

45-1000MHz GaAs/GaN PWR DBLR HYBRID

D10040230P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040230PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Product Description The D10040230PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN pHEMT die has high output
RF Micro Devices
RF Micro Devices
datasheet D10040230PL1 pdf
D10040270GT

GaAs Power Doubler

Product Specification D10040270GT GaAs Power Doubler, 40 – 1000MHz, 27.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Un
PDI
PDI
datasheet D10040270GT pdf
D1009UK

METAL GATE RF SILICON FET

TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 1 H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN E (4 pls) F I N M O J K • SUIT
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datasheet D1009UK pdf
D1003UK

METAL GATE RF SILICON FET

TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW
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datasheet D1003UK pdf
D1004

METAL GATE RF SILICON FET

TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I F M K J N • SUITABLE FOR BROAD BAND APPLI
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datasheet D1004 pdf


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