Datasheet ( Hoja de datos ) - DataSheet.es

D10 Hoja de datos ( Datasheet )


D10 Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
164 D10   Memory Micromodules General Information for D1/ D2 and C Packaging

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding interface for gluing the module to the plastic package potting side contact side s D15 s Physical dimensions and contact positions compliant to the ISO 7816 standard Micromodules delivered as a continuous Super 35 mm tape. (This differs from the standard 35 mm tape in the spacing distance between the indexing holes.) D10 D20 1 1 1 1 s 1 1
STMicroelectronics
STMicroelectronics
datasheet D10 pdf
163 D1000   2SD1000

Renesas
Renesas
datasheet D1000 pdf
162 D1001   2SD1001

Renesas
Renesas
datasheet D1001 pdf
161 D1001UK   GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 DA PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 5.71 9.52 6.60 0.13 4.32 2.54 20.32 PIN 2 PIN 4 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 DRAIN GATE Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260
Seme LAB
Seme LAB
datasheet D1001UK pdf
160 D1002UK   METAL GATE RF SILICON FET

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 TetraFET D1002UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss
Seme LAB
Seme LAB
datasheet D1002UK pdf
159 D1003UK   METAL GATE RF SILICON FET

TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DM PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 Dia. 5.71 12.7 Dia. 6.60 0.13 4.32 3.17 26.16 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 Dia. 0.225 0.500 Dia. 0.260 0.005 0.170 0.125 1.03 Tol. 0.005 0.0
Seme LAB
Seme LAB
datasheet D1003UK pdf
158 D1004   METAL GATE RF SILICON FET

TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I F M K J N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DT PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.
Seme LAB
Seme LAB
datasheet D1004 pdf
157 D10040180GT   GaAs Power Doubler

Product Specification D10040180GT GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations D10040180GT APPLICATION • 40 to 1000 MHz CATV amplifier systems DESCRIPTION • Hybrid Power Doubler amplifier module employing GaAs die GaAs Power Doubler Hybrid 40 – 1000MHz 19.0dB min. Gain @ 1GHz 375mA max. @ 24VDC LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL Vi Vov Ts
PDI
PDI
datasheet D10040180GT pdf
156 D10040180GTH   GaAs Power Doubler

Product Specification D10040180GTH GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC FEATURES • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations High output capability D10040180GTH APPLICATION • 40 to 1000 MHz CATV amplifier systems GaAs Power Doubler Hybrid High Output Capability 40 – 1000MHz 19.0dB min. Gain @ 1GHz 440mA max. @ 24VDC DESCRIPTION • Hybrid Power Doubler amplifier module with high output capability employing GaAs die LIMITING VALUES In
PDI
PDI
datasheet D10040180GTH pdf
155 D10040200GT   Product Specification

Product Specification D10040200GT GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations D10040200GT APPLICATION 40 to 1000 MHz CATV amplifier systems DESCRIPTION Hybrid Power Doubler amplifier module employing GaAs die GaAs Power Doubler Hybrid 40 – 1000MHz 20.0dB min. Gain @ 1GHz 375mA max. @ 24VDC LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBO L Vi Vov
PDI
PDI
datasheet D10040200GT pdf


Enlace url :
[1] [2] [3] [4] [5] [6] [7] >>>.....[17] 

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF
TD357EG

This electronic part is N-Channel Enhancement Mode MOSFET.

UNIKC
UNIKC
PDF
TD381BA

This electronic part is N-Channel Enhancement Mode MOSFET.

UNIKC
UNIKC
PDF
UTC2SC1384

The UTC 2SC1384 is power amplifier and driver.

Unisonic Technologies
Unisonic Technologies
PDF


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z






www.DataSheet.es    |  2017    |  Contacto