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C3890 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 C3890   2SC3890

2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3890 500 400 10 7(Pulse14) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 50typ
Sanken electric
Sanken electric
datasheet C3890 pdf

C3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
C3150

2SC3150

Ordering number:EN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3150] JEDEC
Sanyo Semicon Device
Sanyo Semicon Device
datasheet C3150 pdf
C3866

2SC3866

Fuji Electric
Fuji Electric
datasheet C3866 pdf
C3807

2SC3807

Datasheet.es Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers. Package Dimensions unit:mm 2043A [2SC3807] Features
Sanyo Semicon Device
Sanyo Semicon Device
datasheet C3807 pdf
C32725

BC327-xx

BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 05 — 21 February 2005 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1: Product overview Package Philips BC807 BC807W BC327 [1] [1
ETC
ETC
datasheet C32725 pdf
C3205

2SC3205

w w w .d e e h s a t a . u t4 m o c
Korea Electronics
Korea Electronics
datasheet C3205 pdf
C3998

2SC3998

Ordering number:ENN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).
Sanyo Semicon Device
Sanyo Semicon Device
datasheet C3998 pdf
C3311

2SC3311

Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A ■ Features • Optimum for high-density mounting • Allowing supply with the radial taping 15.6±0.5 Unit: mm 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 www.datasheet.eso
Panasonic
Panasonic
datasheet C3311 pdf
C3209

2SC3209

NEC Electronics
NEC Electronics
datasheet C3209 pdf


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