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A614 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
2 A614   Low Frequency Power Amplifier

·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION:Low Frequency Power Amplifier. A614 —PNP silicon — Power Regulator ■■MAXIMUM RATINGS(Ta=25℃) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -80 -55 -5 -3.0 25 150 V V V A W ℃ 1 TO-220 2.Collector 3.Emitter 1.Base ﹣55~150℃ ■■ ELECTRICAL CHARACTERISTICS PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown
FGX
FGX
datasheet A614 pdf
1 A614    2SA614

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w PARAMETER s c s i . w VALUE -80 -55 -5 -3 25 UNIT n c . i m e V V VEBO Emitter-Base Voltage V IC Collector Current-Continuous A PC Collector Power Dissipation W TJ Junct
INCHANGE
INCHANGE
datasheet A614 pdf


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