9014T Price ( Datasheet PDF )

9014T Price ( Datasheet, Hoja de datos )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	9014T	Silicon NPN transistor 9014T(BR3DG9014T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features PC 大,hFE 高而且特性好,与 9015T(BR3CG9015T)互补。 High PC and hFE excellent hFE linearity, complementary pair with 9015T(BR3CG9015T). 用途 / Applications 用于低电平、低噪声的前置放大器。 Low frequency, low noise amplifier. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1：Base PIN 2：Collector 印章代码 / Marking hFE Classifications Symbol hFE Range Marking A 60～150 HJ6A PIN 3：Emitter B 10	FOSHAN BLUE ROCKET

90 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
9014C	NPN Silicon Transistor UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES High total power dissipation. (450mW) Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25	UTC
9014	NPN SILICON TRANSISTOR 9014 NPN SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 1.EMITTER 2.BASE 3.COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter	Wing Shing Computer Components
9013	NPN SILICON TRANSISTOR 9013 NPN SILICON TRANSISTOR TO 92 FEATURES 特征 1.EMITTER 发射极 Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR)CBO : 45 最大耗散功率 2.BASE W A Tamb=25 基极 3.COLLECTOR 最大集电极电流集电极 1 2 3	Wing Shing Computer Components
9018	NPN Epitaxial Planar Transistor UNISONIC TECHNOLOGIES CO., LTD 9018 NPN EPITAXIAL PLANAR TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER  FEATURES * High Current Gain Bandwidth Product fT =1.1GHz (Typ)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9018L-x-T92-B 9018G-	Unisonic Technologies
9012H	PNP EPITAXIAL SILICON TRANSISTOR UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES High total power dissipation. (625mW) High collector current. (-500mA) Excellent hFE linearity Complementary to UTC 9013 1 TO-92 1:EMITTER 2:BASE 3:CO	Unisonic Technologies
9015	PRE-AMPLIFIER UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9014 ORDERING INFORMATION Ordering Number Lead Free 9	Unisonic Technologies
9012	PNP SILICON EPITAXIAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATURES High total power dissipation. (625mW) High collector current. (-500mA) Excellent hFE linearity Complementary to UTC 9013	Unisonic Technologies
903BDG	P0903BDG NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 9.5m ID 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Niko-Sem

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