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9012H Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 9012H   PNP EPITAXIAL SILICON TRANSISTOR

UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj TSTG RATING -40 -20 -5 -500 625 150 -55 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (T
Unisonic Technologies
Unisonic Technologies
datasheet 9012H pdf

90 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
9014C

NPN Silicon Transistor

UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25
UTC
UTC
datasheet 9014C pdf
9013

NPN SILICON TRANSISTOR

9013 NPN SILICON TRANSISTOR TO 92 FEATURES 特 征 1.EMITTER 发 射 极 Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR)CBO : 45 最大耗散功率 2.BASE W A Tamb=25 基 极 3.COLLECTOR 最大集电极电流 集 电 极 1 2 3
Wing Shing Computer Components
Wing Shing Computer Components
datasheet 9013 pdf
9014

NPN SILICON TRANSISTOR

9014 NPN SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 1.EMITTER 2.BASE 3.COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter
Wing Shing Computer Components
Wing Shing Computer Components
datasheet 9014 pdf
9018

NPN Epitaxial Planar Transistor

UNISONIC TECHNOLOGIES CO., LTD 9018 NPN EPITAXIAL PLANAR TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER  FEATURES * High Current Gain Bandwidth Product fT =1.1GHz (Typ)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9018L-x-T92-B 9018G-
Unisonic Technologies
Unisonic Technologies
datasheet 9018 pdf
9012H

PNP EPITAXIAL SILICON TRANSISTOR

UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER 2:BASE 3:CO
Unisonic Technologies
Unisonic Technologies
datasheet 9012H pdf
9015

PRE-AMPLIFIER

UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number Lead Free 9
Unisonic Technologies
Unisonic Technologies
datasheet 9015 pdf
9012

PNP SILICON EPITAXIAL TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013
Unisonic Technologies
Unisonic Technologies
datasheet 9012 pdf
903BDG

P0903BDG

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 9.5m ID 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
Niko-Sem
Niko-Sem
datasheet 903BDG pdf


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