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2SK3418 Hoja de datos ( Datasheet )


2SK3418 Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 2SK3418   Silicon N Channel MOS FET

2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline TO-220AB D G S ADE-208-941 (Z) 1st. Edition Mar. 2001 1 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3418 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current VDSS VGSS ID I Note1 D (pulse) I DR Avalanche current Avalanche energy Channel dissipation I Note3 AP E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW
Hitachi Semiconductor
Hitachi Semiconductor
datasheet 2SK3418 pdf
1 2SK3418   Silicon N Channel MOS FET

2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching Outline TO-220AB D G S1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg REJ03G0407-0200 (Pre
Renesas
Renesas
datasheet 2SK3418 pdf


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