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2SK2396A Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 2SK2396A   Silicon Power MOS FET

N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm f = 470 860 MHz Unit mm TA = 25 D.C. VDS VGS ID PT Rth Tch Tstg 60 7 15 290 0.6 200 65 200 V V A W /W TA = 25 IGSS VGS off IDSS gm PO hD GL VGS = 7 V VDS = 5 V, ID = 50 mA VDS= 60 V VDS = 5 V, ID = 3 A, D ID = 100 mA f = 860 MHz, VDD = 30 V IDQ = 150 mA 2, Pin = 40 dBm f
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Renesas
datasheet 2SK2396A pdf

2SK23 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
2SK2396A

Silicon Power MOS FET

N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm f = 470 860 MHz Unit mm TA = 25 D.C. VDS VGS ID PT Rth Tch Tstg 60 7 15 290 0.6 200 65 200 V V A W /W TA
Renesas
Renesas
datasheet 2SK2396A pdf
2SK2388

Silicon N-Channel MOS Type

Toshiba
Toshiba
datasheet 2SK2388 pdf
2SK2333

HVX-2 Series Power MOSFET(700V 6A)

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2333 ( F6F70HVX2 ) 700V 6A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. •œ Avalanche
Shindengen Electric Mfg.Co.Ltd
Shindengen Electric Mfg.Co.Ltd
datasheet 2SK2333 pdf
2SK2324

Silicon N-Channel Power F-MOS

Power F-MOS FETs 2SK758 2SK2324(Tentative) Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2 energy capability guaranteed switching q High-speed q Low q No ON-resistance 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 secon
Panasonic
Panasonic
datasheet 2SK2324 pdf


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