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1N4148 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
100 1N4148   High-speed diodes

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4446; 1N4448 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 15 Philips Semiconductors High-speed diodes Product specification 1N4148; 1N4446; 1N4448 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V • Repetitive peak forward current: max. 450 mA • Forward voltage: max. 1 V. APPLICATIONS • High-speed switching. DESCRIPTION The 1N4148, 1N4446,
Philips
Philips
datasheet 1N4148 pdf
99 1N4148   Axial Lead Switching Diodes

Axial Lead Switching Diodes Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation Mechanical Data: *Case : DO-35 Glass Case *Weight : Approx 0.13 gram 1N4148/1N4448 SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 100 VOLTS DO-35 DO-35 Outline Dimensions Unit:mm D A B C A DIM DO-35 A Min Max B Min Max C Min Max D Min Max - 2.0 WEITRON http//www.weitron.com.tw 1N4148/1N4448 Maximum Ratings ( TA=25 C Unless otherwise noted) Characteristic Non-Repetitive Peak Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRM VPWM VRWM VR Average Rectified Output C
WEITRON
WEITRON
datasheet 1N4148 pdf
98 1N4148   Fast Switching Diode

1N4148 & 1N4448 Fast Switching Diode Features: D Fast Switching Speed D General Purpose Rectification D Silicon Epitaxial Planar Construction Mechanical Data: D Case: DO-35 D Leads: Solderable per MIL-STD-202, Method 208 D Polarity: Cathode Band D Marking: Type Number D Weight: 0.13 grams (approx.) Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Non-Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Working Peak Rev
NTE
NTE
datasheet 1N4148 pdf
97 1N4148   High-speed diodes

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product specification Supersedes data of 1996 Sep 03 1999 May 25 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V • Repetitive peak forward current: max. 450 mA. The diodes are type branded. handbook, halfpage k 1N4148; 1N4448 DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and enc
NXP
NXP
datasheet 1N4148 pdf
96 1N4148   Small Signal Fast Switching Diodes

www.vishay.com 1N4148 Vishay Semiconductors Small Signal Fast Switching Diodes MECHANICAL DATA Case: DO-35 Weight: approx. 105 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box FEATURES • Silicon epitaxial planar diode • Electrically equivalent diodes: 1N4148 - 1N914 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches        PARTS TABLE PART ORDERING CODE 1N4148 1N4148-TAP or 1N4148TR TYPE MARKING V4148 INTERNAL CONSTRUCTION Singl
Vishay Telefunken
Vishay Telefunken
datasheet 1N4148 pdf
95 1N4148   FAST SWITCHING DIODE

WTE POWER SEMICONDUCTORS 1N4148 Pb FAST SWITCHING DIODE Features ! ! ! ! Fast Switching Speed A Glass Package Version for High Reliability A B High Conductance Available in Both Through-Hole and Surface Mount Versions C D Mechanical Data ! ! ! ! ! ! Case: DO-35, Molded Glass Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.13 grams Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 DO-35 Dim Min Max 25.40 — A — 4.00 B — 0.60 C —
Won-Top Electronics
Won-Top Electronics
datasheet 1N4148 pdf
94 1N4148   SMALL-SIGNAL DIODE

Zowie Technology Corporation
Zowie Technology Corporation
datasheet 1N4148 pdf
93 1N4148   SIGNAL DIODE

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4148 1N4148 SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300 mA Junction Temp. Tj -65 to 175 °C Storage Temp. Tstg -65 to 175 °C Mechanical Data Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated 26 MIN Dimensions in millimeters Dimensions (DO-35) DO-35 26 MIN 0.457 DIA. 0.559 4.2 max. 2.0 DIA. max. Electrical Characteristics (Ta=25°C) Ratings Minimum Breakdown Voltage
Rectron Semiconductor
Rectron Semiconductor
datasheet 1N4148 pdf
92 1N4148   Switching diode

1N4148 / 1N4150 / 1N4448 / 1N914B Diodes Switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ∗This product is available only outside of Japan. !Applications High-speed switching !External dimensions (Units : mm) !Features 1) Glass sealed envelope. (GSD) 2) High speed. 3) High reliability. CATHODE BAND (BLACK) Type No. φ 0.5±0.1 C 29±1 3.8±0.2 29±1 A φ 1.8±0.2 !Construction Silicon epitaxial planar ROHM : GSD EIAJ : − JEDEC : DO-35 !Absolute maximum ratings (Ta = 25°C) Type 1N4148 1N4150 1N4448 (1N914B) VRM (V) 100 50 100 VR (V) 75 50 75 IFM (mA) 450 600 450 IO (mA) 150 200 150 IF (mA) 200 250 200 IFSM 1µs (A) 2 4 2 P (mW)
Rohm
Rohm
datasheet 1N4148 pdf
91 1N4148   SMALL-SIGNAL SWITCHING DIODE

Jinan Gude Electronic Device
Jinan Gude Electronic Device
datasheet 1N4148 pdf


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