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PDF CGHV96050F1 Data sheet ( Hoja de datos )
| Número de pieza | CGHV96050F1 | |
| Descripción | Input/Output Matched GaN HEMT | |
| Fabricantes | CREE | |
| Logotipo |  |
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CGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
PackPaNg:eCTGyHpVe:9464005201F01
Typical Performance Over 7.9-8.4 GHz (TC = 25˚C)
Parameter
7.9 GHz 8.0 GHz 8.1 GHz 8.2 GHz 8.3 GHz 8.4 GHz
Units
Linear Gain
17.0 16.7 16.4 15.9 15.2 14.6
dB
Output Power
22.4 28.2 28.2 31.6 31.6 31.6
W
Power Gain
15.6 15.0 15.1 14.5 14.0 13.2
dB
Power Added Efficiency
30 37 37 39 38 37 %
Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2
Features
• 7.9 - 8.4 GHz Operation
• 80 W POUT typical
• >13 dB Power Gain
• 33 % Typical Linear PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop
Applications
• Satellite Communication
• Terrestrial Broadband
Subject to change without notice.
www.cree.com/rf
1
1 page  
CGHV96050F1 Typical Performance
Figure 5. - Two Tone Power Added Efficiency vs. Output Power
PAE Two Tone vs. Pout
VDD = 40 V, Tone10S0pKaHcz ing = 100 kHz
50%
45%
40%
35%
7.9 GHz
8.0 GHz
8.1 GHz
8.2 GHz
8.3 GHz
8.4 GHz
30%
25%
20%
15%
10%
5%
0%
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power (dBm)
Figure 6. - Two Tone Gain vs. Output Power
VDD = 40 VG, aTionnTew1oS0Tp0oaKncHeiznvsg. =Po1u0t 0 kHz
20
19
18
17
16
15
14
13
12
11 7.9 GHz
10 8.0 GHz
9 8.1 GHz
8 8.2 GHz
7 8.3 GHz
6 8.4 GHz
5
4
3
2
1
0
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power (dBm)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5 CGHV96050F1 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Product Dimensions CGHV96050F1 (Package Type — 440210)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
11 CGHV96050F1 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet CGHV96050F1.PDF ] | |
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