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Número de pieza | TGF2023-2-10 | |
Descripción | 50 Watt Discrete Power GaN on SiC HEMT | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TGF2023-2-10 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! Applications
• Defense & Aerospace
• Broadband Wireless
TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 18 GHz
• 47.3 dBm Nominal PSAT at 3 GHz
• 69.5% Maximum PAE
• 19.8 dB Nominal Power Gain at 3 GHz
• Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 0.82 x 2.48 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-10 is a discrete 10 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-10 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2023-2-10 typically provides 47.4 dBm of
saturated output power with power gain of 19.8 dB at 3
GHz. The maximum power added efficiency is 69.5 %
which makes the TGF2023-2-10 appropriate for high
efficiency applications.
Lead-free and RoHS compliant
Pad Configuration
Pad No.
1-8
9
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
Datasheet: Rev C 09-27-13
© 2013 TriQuint
Ordering Information
Part
ECCN Description
TGF2023-2-10 3A001b.3.b 50 Watt GaN HEMT
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Simulated signal: 10% pulses. Bond wires not included.
Load Pull
Model 3dB compression performance at 6GHz, 12V, 200mA, 25°C
Γs = 0.78 ∠ 155°
Zo = 5Ω
Max Model Power is 43.8dBm
at Γl = 0.39∠ 172°
Max Model PAE is 66.2%
at Γl = 0.47∠ 100°
Max Measured G3dB is 10.9dB
at Γl = 0.69∠ 88°
10.94
0.4
10.33
9.779
66.2
9.276
8.819
8.402
8.023
7.678
61.6
7.364
7.078
6.817 43.83
57.4
53.6 42.89
50.2
47
44.1
42.04
40.55
41.26
P3dB
PAE3dB
G3dB
Load Pull
Model 3dB compression performance at 6GHz, 12V, 500mA, 25°C
Γs = 0.78 ∠ 155°
Zo = 5Ω
Max Model Power is 43.6dBm
at Γl = 0.42∠ 169°
Max Model PAE is 66.3%
at Γl = 0.44∠ 102°
Max Measured G3dB is 13.3dB
at Γl = 0.65∠ 95°
0.4
13.29
12.76
12.28
66.2
11.84
11.44
11.08
10.75
10.45
10.17
9.923 43.55
9.696
61.9
58 42.63
54.4
41.79
51.1
48.1
41.03
40.34
P3dB
PAE3dB
G3dB
Load Pull
Model 3dB compression performance at 6GHz, 28V, 200mA, 25°C
Γs = 0.79 ∠ 153°
Zo = 5Ω
Max Model Power is 47.5dBm
at Γl = 0.3∠ 85°
Max Model PAE is 64.2%
at Γl = 0.54∠ 78°
Max Measured G3dB is 12.9dB
at Γl = 0.72∠ 70°
12.8
0.4 43.65
44.7
12
45.31
64.12
45.97
11.2
58.75
10.6 53.87
9.92
49.42
47.51
9.35
8.82
8.35
45.38
41.69
38.34
35.28
32.51
46.7
P3dB
PAE3dB
G3dB
Load Pull
Model 3dB compression performance at 6GHz, 28V, 500mA, 25°C
Γs = 0.79 ∠ 153°
Zo = 5Ω
Max Model Power is 47.3dBm
at Γl = 0.32∠ 88°
Max Model PAE is 65.5%
at Γl = 0.54∠ 79°
Max Measured G3dB is 15.3dB
at Γl = 0.7∠ 71°
0.4 15.3
14.5 65.47
13.8
60.11
13.2
55.23 47.3
12.6
12
11.5
50.79
46.75
43.07
39.72
36.67
46.44
11.1
45.65
44.94
44.29
43.7
P3dB
PAE3dB
G3dB
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Model Efficiency Tuned Data
Simulated signal: 10% pulses.
Pout & Drain Current vs. Input Power
55
50
VD=28 V, IDQ=200 mA
Freq.=6 GHz, Efficiency Tuned
Temp.=+25°C
45 Model Without Bond Wires
40
4.4
4.0
3.6
3.2
Gain & PAE vs. Input Power
40
VD=28 V, IDQ=200 mA
Temp.=+25°C
35
Freq.=6 GHz, Efficiency Tuned
Model Without Bond Wires
30
80
70
60
35 Pout
30
25
20
2.8 25
2.4
20
2.0
1.6 15
Gain
50
40
30
15 1.2 10 20
10 ID 0.8
PAE
5 0.4 5 10
0 0.0 0 0
-5 0 5 10 15 20 25 30 35 40
-5 0 5 10 15 20 25 30 35 40
Input Power (dBm)
Input Power (dBm)
Source Γ : fo: 0.79∠153°, 2fo: 0, 3fo: 0
Load Γ : fo: 0.54∠78°, 2fo: 0, 3fo: 0
Pout & Drain Current vs. Input Power
60
VD=28 V, IDQ=500 mA
Temp.=+25°C
Freq.=6 GHz, Efficiency Tuned
50 Model Without Bond Wires
3.0
2.5
Gain & PAE vs. Input Power
40
VD=28 V, IDQ=500 mA
Temp.=+25°C
35
Freq.=6 GHz, Efficiency Tuned
Model Without Bond Wires
80
70
30 60
40 2.0
25 50
30 Pout
1.5 20
Gain
40
15
20 ID 1.0
30
10 PAE 20
10 0.5
5 10
0 0.0 0 0
-5 0 5 10 15 20 25 30 35 40
-5 0 5 10 15 20 25 30 35 40
Input Power (dBm)
Input Power (dBm)
Source Γ : fo: 0.79∠153°, 2fo: 0, 3fo: 0
Load Γ : fo: 0.54∠79°, 2fo: 0, 3fo: 0
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet TGF2023-2-10.PDF ] |
Número de pieza | Descripción | Fabricantes |
TGF2023-2-10 | 50 Watt Discrete Power GaN on SiC HEMT | TriQuint Semiconductor |
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