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PDF TGF2023-2-05 Data sheet ( Hoja de datos )

Número de pieza TGF2023-2-05
Descripción 25 Watt Discrete Power GaN on SiC HEMT
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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Applications
Defense & Aerospace
Broadband Wireless
TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT
Product Features
Frequency Range: DC - 18 GHz
43 dBm Nominal PSAT at 3 GHz
78.3% Maximum PAE
18 dB Nominal Power Gain at 3 GHz
Bias: VD = 12 - 32 V, IDQ = 100 - 500 mA
Technology: TQGaN25 on SiC
Chip Dimensions: 0.82 x 1.44 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-05 is a discrete 5 mm GaN on
SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-05 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
Pad Configuration
Pad No.
1-4
5
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2023-2-05 typically provides 43.0 dBm of
saturated output power with power gain of 18 dB at
3 GHz. The maximum power added efficiency is
78.3 % which makes the TGF2023-2-05 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Ordering Information
Part
ECCN Description
TGF2023-2-05 3A001b.3.b 25 Watt GaN HEMT
Datasheet: Rev C 9-27-13
© 2013 TriQuint
- 1 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com

1 page




TGF2023-2-05 pdf
TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT
Thermal and Reliability Information (1)
Parameter
Test Conditions
Value
Thermal Resistance, θJC (No RF Drive)
Channel Temperature, TCH (No RF Drive)
Median Lifetime, TM (No RF Drive)
Thermal Resistance, θJC (Under RF Drive)
Channel Temperature, TCH (Under RF Drive)
Median Lifetime, TM (Under RF Drive)
VD = 28 V, ID = 0.5 A ,
PD = 14 W, Tbaseplate = 70°C
VD = 28 V, ID = 1.54 mA,
POUT = 43.9 dBm, PD = 18 W,
Tbaseplate = 70°C
5.79
151
1.57 x 10^9
6.09
180
7.99 x 10^7
Notes:
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.
Units
ºC/W
°C
Hrs
°C/W
°C
Hrs
Median Lifetime
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
Thermal Resistance
8.0 θJC vs. Baseplate Temperature vs. PD
7.5 PD = 27 W
PD = 24 W
7.0 PD = 19 W
PD = 14 W
6.5
6.0
5.5
5.0
4.5
20 30 40 50 60 70 80 90
Baseplate Temperature (°C)
100
Datasheet: Rev C 9-27-13
© 2013 TriQuint
- 5 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com

5 Page





TGF2023-2-05 arduino
TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT
Load Pull Contours
Load pull signal: 10%, 100 μs pulses. Bond wires included. Measured data provided by Modelithics.
Load Pull
Model and Measured Power at 10GHz, 12V, 250mA, Pin = 35dBm, 25°C
Γs = 0.69 -152°
Γs2 = 0.70 -161°
Γs3 = 0.43 167°
0.4
0.3
0.2
Max Model Power is 39.5dBm
at Γl = 0.87-163°
Max Measured Power is 39.1dBm
at Γl = 0.82-163°
0.1
-0.1
-0.2
39.14
39.47
35.99
36.51
35.09
37.08
38.38 37.7
34.2
36.01 35.06
38.2 37.06
Model
Measured
Load Pull
Model and Measured PAE at 10GHz, 12V, 250mA, Pin = 35dBm, 25°C
Γs = 0.69 -152°
Γs2 = 0.70 -161°
Γs3 = 0.43 167°
0.4
0.3
0.2
Max Model PAE is 43.4%
at Γl = 0.86-166°
Max Measured PAE is 42.4%
at Γl = 0.81-165°
0.1
7.43
15.3
24.8 15.9 9.93
-0.1
36.3
42.842.2
30.3
23.1
27.2
36.731.7
-0.2
Model
Measured
Load Pull
Model and Measured Power at 10GHz, 28V, 100mA, Pin = 35dBm, 25°C
Γs = 0.69 -152°
Γs2 = 0.70 -161°
Γs3 = 0.43 167°
0.4
0.3
0.2
Max Model Power is 42.3dBm
at Γl = 0.85-173°
Max Measured Power is 41.7dBm
at Γl = 0.8-175°
0.1
41.14
40.65
39.1
39.8 39.43
40.21
42.27
41.31
40.4339.63
38.91
38.24
-0.1
-0.2
Model
Measured
Load Pull
Model and Measured PAE at 10GHz, 28V, 100mA, Pin = 35dBm, 25°C
Γs = 0.69 -152°
Γs2 = 0.70 -161°
Γs3 = 0.43 167°
0.4
0.3
0.2
Max Model PAE is 51.1%
at Γl = 0.86-174°
Max Measured PAE is 48.9%
at Γl = 0.8-177°
0.1
20.5
45.3
37.9
31.726.6
23.5
16.3
50.7 41 29.5
-0.1
-0.2
Model
Measured
Datasheet: Rev C 9-27-13
© 2013 TriQuint
- 11 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com

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