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PDF TGF2023-2-02 Data sheet ( Hoja de datos )
| Número de pieza | TGF2023-2-02 | |
| Descripción | 12 Watt Discrete Power GaN on SiC HEMT | |
| Fabricantes | TriQuint Semiconductor | |
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Applications
• Defense & Aerospace
• Broadband Wireless
TGF2023-2-02
12 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 18 GHz
• 40.1 dBm Nominal PSAT at 3 GHz
• 73.3% Maximum PAE
• 21 dB Nominal Power Gain at 3 GHz
• Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 0.82 x 0.92 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-02 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
Pad Configuration
Pad No.
1-2
3
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2023-2-02 typically provides 40.1 dBm of
saturated output power with power gain of 21 dB at
3 GHz. The maximum power added efficiency is
73.3 % which makes the TGF2023-2-02 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Ordering Information
Part
ECCN Description
TGF2023-2-02 EAR99
12 Watt GaN HEMT
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGF2023-2-02
12 Watt Discrete Power GaN on SiC HEMT
Load Pull Contours
Load pull signal: 10%, 100 μs pulses. Bond wires included. Measured data provided by Modelithics.
Load Pull
Model and Measured Power at 3GHz, 12V, 50mA, Pin = 18dBm, 25°C
Load Pull
Model and Measured PAE at 3GHz, 12V, 50mA, Pin = 18dBm, 25°C
Γs = 0.84 ∠ 163°
Γs2 = 0.47 ∠ 75°
Γs3 = 0.73 ∠ 134°
0.4
Max Model Power is 35.7dBm
at Γl = 0.71∠ 164°
Max Measured Power is 36.6dBm
at Γl = 0.73∠ 161°
36.6
35.71
35.79
32.71
34.38
35.05
33.77
33.22
34.75
33.88
33.08
32.36
31.7
Γs = 0.84 ∠ 163°
Γs2 = 0.47 ∠ 75°
Γs3 = 0.73 ∠ 134°
0.4
Max Model PAE is 73.2%
at Γl = 0.52∠ 131°
Max Measured PAE is 73.3%
at Γl = 0.67∠ 139°
73.03
68.47 64.32
73.18
53.97
60.54 57.1
68.1 63.48
59.28
55.45
Model
Measured
Model
Measured
Load Pull
Model and Measured Power at 3GHz, 12V, 125mA, Pin = 18dBm, 25°C
Γs = 0.84 ∠ 163°
Γs2 = 0.47 ∠ 75°
Γs3 = 0.73 ∠ 134°
0.4
0.3
0.2
Max Model Power is 36.2dBm
at Γl = 0.7∠ 166°
Max Measured Power is 36.7dBm
at Γl = 0.71∠ 162°
0.1
-0.1
-0.2
36.66
36.17
35.85
35.13
35.19
33.31
34.46
33.86
34.3
33.49 32.75
Model
Measured
Load Pull
Model and Measured PAE at 3GHz, 12V, 125mA, Pin = 18dBm, 25°C
Γs = 0.84 ∠ 163°
Γs2 = 0.47 ∠ 75°
Γs3 = 0.73 ∠ 134°
0.4
0.3
0.2
0.1
-0.1
-0.2
Max Model PAE is 74.1%
at Γl = 0.52∠ 133°
Max Measured PAE is 72.5%
at Γl = 0.62∠ 145°
72.38
74.02
67.88
68.96
64.36
60.17
56.36
63.78
60.06
56.66
53.57
Model
Measured
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGF2023-2-02
12 Watt Discrete Power GaN on SiC HEMT
Power Tuned Data
Measured data provided by Modelithics.
Pout & Drain Current vs. Input Power
45 700
VD=+28 V, IDQ=62.5 mA
Temp.=+25°C
40
Freq.=10 GHz, Power Tuned
Bond Wires Included
600
35
Pout
30
500
400
Gain & PAE vs. Input Power
16 70
VD=+28 V, IDQ=62.5 mA
14
Freq.=10 GHz, Power Tuned
Bond Wires Included
Temp.=+25°C
60
12 Gain
50
10 40
25
20
15
10
10
ID
Measured
Modeled
300
200
100
8
6
4
PAE
15 20 25
Input Power (dBm)
30
0
35
2
10 15 20 25
Input Power (dBm)
Source Γ: fo: 0.69∠−152°, 2fo: 0.70∠−161°, 3fo: 0.43∠167°
Load Γ: fo: 0.69∠174°, 2fo: 0.68∠107°, 3fo: 0.49∠39°
30
20
Measured
Modeled
10
0
30 35
Pout & Drain Current vs. Input Power
45 700
VD=+28 V, IDQ=125 mA
Temp.=+25°C
40
Freq.=10 GHz, Power Tuned
Bond Wires Included
600
35
Pout
30
500
400
Gain & PAE vs. Input Power
16 70
VD=+28 V, IDQ=125 mA
14
Freq.=10 GHz, Power Tuned
Bond Wires Included
Temp.=+25°C
60
12
Gain
10
50
40
25
20
15
10
10
ID
Measured
Modeled
300
200
100
8
6
4
PAE
Measured
Modeled
30
20
10
15 20 25
Input Power (dBm)
30
0
35
2
10 15 20 25
Input Power (dBm)
Source Γ: fo: 0.69∠−152°, 2fo: 0.70∠−161°, 3fo: 0.43∠167°
Load Γ: fo: 0.69∠174°, 2fo: 0.68∠107°, 3fo: 0.49∠39°
30
0
35
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TGF2023-2-02.PDF ] | |
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