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PDF TGF2023-2-01 Data sheet ( Hoja de datos )
| Número de pieza | TGF2023-2-01 | |
| Descripción | 6 Watt Discrete Power GaN on SiC HEMT | |
| Fabricantes | TriQuint Semiconductor | |
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Applications
• Defense & Aerospace
• Broadband Wireless
TGF2023-2-01
6 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 18 GHz
• 38 dBm Nominal PSAT at 3 GHz
• 71.6% Maximum PAE
• 18 dB Nominal Power Gain at 3 GHz
• Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-01 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2023-2-01 typically provides 37.7 dBm of
saturated output power with power gain of 20.7 dB at
3 GHz. The maximum power added efficiency is
71.6 % which makes the TGF2023-2-01 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Pad Configuration
Pad No.
1
2
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
Datasheet: Rev C 09-27-13
© 2013 TriQuint
Ordering Information
Part ECCN Description
TGF2023-2-01 EAR99
6 Watt GaN HEMT
- 1 of 22 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGF2023-2-01
6 Watt Discrete Power GaN on SiC HEMT
Maximum Gain Performance
Modelithics provided measured data at 25mA and 62.5mA bias currents.
Maximum Gain vs. Frequency
35
VD = 12 V, IDQ = 25 mA
Temp.=+25°C
30
25
20
Measured
15 Modeled
10
5
0
0 5 10 15 20 25 30
Frequency (GHz)
Maximum Gain vs. Frequency
35
VD = 12 V, IDQ = 62.5 mA
Temp.=+25°C
30
25
20 Measured
Modeled
15
10
5
0
0 5 10 15 20 25 30
Frequency (GHz)
Maximum Gain vs. Frequency
35
VD = 28 V, IDQ = 25 mA
Temp.=+25°C
30
25
20
Measured
15 Modeled
10
5
0
0 5 10 15 20 25 30
Frequency (GHz)
Maximum Gain vs. Frequency
35
VD = 28 V, IDQ = 62.5 mA
Temp.=+25°C
30
25
20 Measured
Modeled
15
10
5
0
0 5 10 15 20 25 30
Frequency (GHz)
Datasheet: Rev C 09-27-13
© 2013 TriQuint
Maximum Gain vs. Frequency
35
VD = 28 V, IDQ = 125 mA
Temp.=+25°C
30
25
20 Measured
Modeled
15
10
5
0
0 5 10 15 20 25 30
Frequency (GHz)
- 5 of 22 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGF2023-2-01
6 Watt Discrete Power GaN on SiC HEMT
Load Pull Contours
Load pull signal: 10%, 100 μS pulses. Bond wires not included.
Load Pull
Model and Measured Power at 8.45GHz, 28V, 125mA, P3dB, 25°C
Load Pull
Model and Measured PAE at 8.45GHz, 28V, 125mA, P3dB, 25°C
Γs = 0.65 ∠ 169°
Γs2 = 0.74 ∠ 120°
Γs3 = 0.79 ∠ 85°
0.4
0.3
0.2
0.1
Max Model Power is 37.1dBm
at Γl = 0.57∠ 123°
Max Measured Power is 37.3dBm
at Γl = 0.48∠ 123°
36.1
36.44
36.83
37.07
37.25
36.47
35.92
Model
Measured
Γs = 0.65 ∠ 169°
Γs2 = 0.74 ∠ 120°
Γs3 = 0.79 ∠ 85°
0.4
0.3
0.2
0.1
Max Model PAE is 59%
at Γl = 0.67∠ 113°
Max Measured PAE is 59.4%
at Γl = 0.61∠ 114°
58.87
59.2 54.76
51.02
56.5
47.61
54
51.8
Model
Measured
Load Pull
Model and Measured P3dB Gain at 8.45GHz, 28V, 125mA, P3dB, 25°C
Γs = 0.65 ∠ 169°
Γs2 = 0.74 ∠ 120°
Γs3 = 0.79 ∠ 85°
0.4
0.3
0.2
0.1
Max Model G3dB is 14.1dB
at Γl = 0.66∠ 102°
Max Measured G3dB is 11.2dB
at Γl = 0.48∠ 123°
14.12
10.1
10.4
10.8
11.2
13.61
13.15
12.74
Model
Measured
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 11 of 22 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet TGF2023-2-01.PDF ] | |
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