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PDF TGF2021-08 Data sheet ( Hoja de datos )

Número de pieza TGF2021-08
Descripción DC - 12 GHz Discrete power pHEMT
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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No Preview Available ! TGF2021-08 Hoja de datos, Descripción, Manual

Product Datasheet
August 7, 2007
DC - 12 GHz Discrete power pHEMT
TGF2021-08
Key Features and Performance
Frequency Range: DC - 12 GHz
> 39 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
8mm x 0.35μm Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 600-1000mA
(Under RF Drive, Id rises from 600mA to 1920mA)
Chip Dimensions: 0.57 x 2.42 x 0.10 mm
(0.022 x 0.095 x 0.004 in)
Product Description
The TriQuint TGF2021-08 is a discrete 8mm
pHEMT which operates from DC-12 GHz.
The TGF2021-08 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
The TGF2021-08 typically provides
> 39 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-08 appropriate for high efficiency
applications.
The TGF2021-08 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-08 has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
Primary Applications
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
35
30
25
MSG
20
15 MAG
10
5
0
0 2 4 6 8 10 12 14 16
Frequency (GHz)
TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
1

1 page




TGF2021-08 pdf
Product Datasheet
August 7, 2007
Linear Model for 8mm pHEMT
TGF2021-08
L - via = 0.0135 nH (9x)
8
UPC
9
7 UPC 10
Gate Pads (8x)
6
UPC
11
5
UPC
12
4
UPC
13
3 UPC 14
Drain Pads (8x)
2 UPC 15
1 UPC 16
TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev -
5

5 Page










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