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PDF MASW-006102-13610 Data sheet ( Hoja de datos )

Número de pieza MASW-006102-13610
Descripción Silicon PIN Diode Switch
Fabricantes MA-COM 
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No Preview Available ! MASW-006102-13610 Hoja de datos, Descripción, Manual

MASW-006102-13610
HMIC™ Silicon PIN Diode Switch
with Integrated Bias Network
Features
Broad Bandwidth 2 to 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Rugged, Glass Encapsulated Construction
Fully Monolithic
RoHS Compliant
Description
The MASW-006102-13610 is a SP6T broadband
switch with integrated bias network utilizing M/A-COM
Technology Solutions HMICTM (Heterolithic Microwave
Integrated Circuit) process, US Patent 5,268,310. This
wafer fabrication process allows the incorporation of
silicon pedestals that form series and shunt diodes
and vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
elements, plus the combination of silicon and glass
gives this HMIC device low loss and high isolation
performance with exceptional repeatability through low
millimeter frequencies. Large bond pads facilitate the
use of low inductance ribbons or 1 mil wire while full
backside gold metallization allows for die attachment
using 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or
electrically conductive silver epoxy.
Applications
The MASW-006102-13160 is a high performance
switch which is suitable for use in multi-band ECM,
radar, and instrumentation control circuits where high
isolation to insertion loss ratios are required. With a
standard +5V/-5V, TTL controlled PIN diode driver,
80nS switching speeds can be achieved.
V2
Yellow areas denote wire bond pads
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF Incident Power
Bias Current +25°C
Absolute Maximum
-65oC to +125oC
-65oC to +150oC
+175oC
50V
+33dBm C.W.1
±20mA
Note:
1. Maximum operating conditions for a
combination of RF power, D.C. bias and
operating temperature:
+33dBm CW @ 15mA (per diode) @+85°C
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is North America Tel: 800.366.2266 / Fax: 978.366.2266
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.

1 page




MASW-006102-13610 pdf
MASW-006102-13610
HMIC™ Silicon PIN Diode Switch
with Integrated Bias Network
MASW-006102-13610 Schematic
J1 ( Input Common Port )
DC Bias
V2
J7
J6
J5
J4 J3
J2
5
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is North America Tel: 800.366.2266 / Fax: 978.366.2266
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.

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