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Número de pieza | BCR3AS-14B | |
Descripción | Triac | |
Fabricantes | Renesas | |
Logotipo | ||
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No Preview Available ! BCR3AS-14B
Triac
Low Power Use
Features
• IT (RMS) : 3 A
• VDRM : 800 V (Tj = 125°C)
• IFGT I, IRGT I, IRGT III : 30 mA
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
4
12 3
Preliminary
REJ03G1807-0100
Rev.1.00
Jul 22, 2009
• The Product guaranteed maximum junction
temperature 150°C
• Non-Insulated Type
• Planar Passivation Type
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Switching mode power supply, motor control, heater control, and other general purpose control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Voltage class
14
800
700
840
Unit Conditions
V Tj = 125°C
V Tj = 150°C
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Symbol
Ratings
Unit
Conditions
IT (RMS)
3.0
A Commercial frequency, sine full wave
360°conduction, Tc = 133°C Note3
ITSM 30 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t 3.7 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
PGM
3W
PG (AV)
0.3
W
VGM 6 V
IGM 0.5 A
Tj
–40 to +150
°C
Tstg
–40 to +150
°C
— 0.32 g Typical value
REJ03G1807-0100 Rev.1.00 Jul 22, 2009
Page 1 of 7
1 page BCR3AS-14B
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100
80
60 III Quadrant
40
20 I Quadrant
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
102
7 Main Voltage
(dv/dt)c
5 Main Current
IT
3τ
2
Time
VD
(di/dt)c
Time
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
101 III Quadrant
7
5 I Quadrant
3 Minimum
2 Characteristics
Value
100
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Rate of Decay of On-State
Commutating Current (A/ms)
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
100
80 III Quadrant
60
40
20 I Quadrant
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=125°C)
102
7
5
3
2
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
101
7
5
3
Minimum
Characteristics
2 Value
I Quadrant
III Quadrant
100
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5 IRGT III
Typical Example
3 IRGT I
2 IFGT I
102
7
5
3
2
101100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (µs)
REJ03G1807-0100 Rev.1.00 Jul 22, 2009
Page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
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