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PDF BCR3AM-14B Data sheet ( Hoja de datos )

Número de pieza BCR3AM-14B
Descripción Triac
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! BCR3AM-14B Hoja de datos, Descripción, Manual

BCR3AM-14B
Triac
Low Power Use
Features
IT (RMS) : 3 A
VDRM : 800 V (Tj = 125°C)
IFGT I, IRGT I, IRGT III : 30 mA
Outline
Preliminary
REJ03G1806-0100
Rev.1.00
Jul 22, 2009
The Product guaranteed maximum junction
temperature 150°C
Planar Passivation Type
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92)
2
13 2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Heater control, other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
14
800
700
840
Unit Conditions
V Tj = 125°C
V Tj = 150°C
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Ratings
3
30
3.7
3
0.3
6
0.5
– 40 to +150
– 40 to +150
0.32
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
360° conduction, non-continuous
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
REJ03G1806-0100 Rev.1.00 Jul 22, 2009
Page 1 of 7

1 page




BCR3AM-14B pdf
BCR3AM-14B
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
100
80 III Quadrant
60
40
20 I Quadrant
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=125°C)
102
7
5
3
2
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
101
7
5
3
Minimum
Characteristics
2 Value
I Quadrant
III Quadrant
100
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5 IRGT III
Typical Example
3 IRGT I
2 IFGT I
102
7
5
3
2
101100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (µs)
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100
80
III Quadrant
60
40
20 I Quadrant
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
102
7 Main Voltage
(dv/dt)c
5 Main Current
IT
3τ
2
Time
VD
(di/dt)c
Time
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
101 III Quadrant
7
5 I Quadrant
3 Minimum
2 Characteristics
Value
101000 2 3 5 7101 2 3 5 7102 2 3 5 7103
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G1806-0100 Rev.1.00 Jul 22, 2009
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