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PDF BCR25PM-14LJ Data sheet ( Hoja de datos )

Número de pieza BCR25PM-14LJ
Descripción Triac
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! BCR25PM-14LJ Hoja de datos, Descripción, Manual

BCR25PM-14LJ
700V - 25A - Triac
Medium Power Use
Features
IT (RMS) : 25 A
VDRM : 800 V (Tj=125°C)
Tj: 150 °C
IFGTI, IRGTI, IRGT III : 50 mA
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
Preliminary Datasheet
R07DS1224EJ0100
Rev.1.00
Jul 28, 2014
Insulated Type
Planar Passivation Type
Viso : 2000V
UL Recognized: File No. E223904
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
14
800
700
840
Unit Conditions
V Tj = 125°C
Tj = 150°C
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
25
250
262
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 60°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 T2 G terminal to case
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
Page 1 of 7

1 page




BCR25PM-14LJ pdf
BCR25PM-14LJ
Holding Current vs.
Junction Temperature
103
Typical Example
102
101
-40
0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
III Quadrant
100
80 I Quadrant
60
40
20
0
101 102
103 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
102
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
Minimum
101 Value
I Quadrant
Main Voltage
(dv/dt)c
Main Current
IT
τ
100
100
Time
VD
(di/dt)c
Time
101
III Quadrant
102
Rate of Decay of On-State
Commutating Current (A/ms)
Preliminary
Latching Current vs.
Junction Temperature
103
Distribution
T2+, G
Typical
Example
102
101
T2–, G
Typical
Example
100
-40
0
T2+, G+
Typical
Example
40
80
120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
Typical Example
Tj = 150°C
120
III Quadrant
100
80
I Quadrant
60
40
20
0
101 102 103 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
102
Typical Example Main Voltage
Time
Tj = 150°C
(dv/dt)c
VD
IT = 4A
τ = 500μs
VD = 200V
Main Current
IT
(di/dt)c
τ Time
I Quadrant
101
III Quadrant
100
100
Minimum
Value
101 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
Page 5 of 7

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