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PDF V23990-K243-A-PM Data sheet ( Hoja de datos )
| Número de pieza | V23990-K243-A-PM | |
| Descripción | Power Integrated Module | |
| Fabricantes | Vincotech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de V23990-K243-A-PM (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
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MiniSKiiP® 3 PIM
Features
● IGBT3 technology for low saturation losses
● Solderless spring contact mounting system
Target Applications
● Industrial motor drives
Types
● V23990-K243-A-PM
V23990-K243-A-PM
600V/100A
MiniSkiip® 3 housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
Tj=Tjmax
tp=10ms
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=25°C
Th=80°C
Tc=80°C
VCE
IC
ICpulse
Ptot
VGE
tSC
VCC
Tjmax
Tj=Tjmax
tp limited by Tjmax
VCE ≤ 1200V, Tj ≤ Top max
Tj=Tjmax
Tj≤150°C
VGE=15V
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Value
Unit
1600
69
93
700
2450
77
117
150
V
A
A
A2s
W
°C
600 V
85
A
85
300
A
300 A
154
W
224
±20 V
6 µs
360 V
175 °C
Copyright by Vincotech
1
Revision: 3.1
1 page  
V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(IC)
10
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(RG)
10
88
Eon High T
66
4
Eoff High T
2
Eon Low T
0
0 50
With an inductive load at
Tj =
VCE =
VGE =
Rgon =
Rgoff =
25/125
300
±15
8
8
°C
V
V
Ω
Ω
100
Eoff Low T
4
2
150
I C (A)
200
0
08
With an inductive load at
Tj =
VCE =
VGE =
IC =
25/125
300
±15
100
°C
V
V
A
16
T1,T2,T3,T4,T5,T6,T7 IGBT
Eon High T
Eon Low T
Eoff High T
Eoff Low T
24 32 R G ( Ω ) 40
Figure 7
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
3,2
T1,T2,T3,T4,T5,T6,T7 IGBT
Erec
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
3,2
T1,T2,T3,T4,T5,T6,T7 IGBT
2,4 2,4
Tj = Tjmax -25°C
Erec
1,6 1,6
Tj = Tjmax -25°C
Tj = 25°C
0,8
Tj = 25°C
0,8
0
0 50
With an inductive load at
Tj = 25/125 °C
VCE =
300
V
VGE =
±15
V
Rgon =
8
Ω
100
150
I C (A)
200
0
08
With an inductive load at
Tj = 25/125 °C
VCE =
300
V
VGE =
±15
V
IC = 100 A
16
24
Erec
Erec
32 R G ( Ω ) 40
Copyright by Vincotech
5
Revision: 3.1
5 Page 
V23990-K243-A-PM
D8,D9,D10,D11,D12,D13
Figure 1
Typical diode forward current as
a function of forward voltage
IF= f(VF)
150
D8,D9,D10,D11,D12,D13 diode
Figure 2
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
D8,D9,D10,D11,D12,D13 diode
120
100
90
60
30
Tj = Tjmax-25°C
0
0,0
At
tp =
0,3 0,6
250 µs
Tj = 25°C
0,9 1,2 V F (V) 1,5
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
0,90
10-3
K/W
10-2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
t p (s)
10-1 100
101
Figure 3
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
180
D8,D9,D10,D11,D12,D13 diode
Figure 4
Forward current as a
function of heatsink temperature
IF = f(Th)
150
D8,D9,D10,D11,D12,D13 diode
150
120
120
90
90
60
60
30
30
0
0
At
Tj =
30 60
150 ºC
0
90 120 T h ( o C) 150
0 30 60
At
Tj = 150 ºC
90 120 T h ( o C) 150
Copyright by Vincotech
11
Revision: 3.1
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet V23990-K243-A-PM.PDF ] | |
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