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PDF V23990-P589-C41-PM Data sheet ( Hoja de datos )

Número de pieza V23990-P589-C41-PM
Descripción Power Integrated Module
Fabricantes Vincotech 
Logotipo Vincotech Logotipo



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No Preview Available ! V23990-P589-C41-PM Hoja de datos, Descripción, Manual

V23990-P589-*4*-PM
flow PIM 1
Features
3~rectifier, optional BRC, Inverter, NTC
Very compact housing, easy to route
IGBT4 / EmCon4 technology for low saturation losses
and improved EMC behaviour
Target Applications
Industrial drives
Embedded Drives
Types
V23990-P589-A41-PM
V23990-P589-A41Y-PM
V23990-P589-A418-PM
V23990-P589-C41-PM
1200V/25A
flow 1 housing
12mm housing
Solder pins
17mm housing
Solder pins
Schematic
17mm housing
Pressfit pins
Tj=25°C, unless otherwise specified
Parameter
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
Tj=Tjmax
tp=10ms
half sine wave
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=150°C
Th=80°C
Tc=80°C
VCE
IC
ICpulse
Ptot
VGE
tSC
VCC
Tjmax
Tj=Tjmax
tp limited by Tjmax
VCE 1200V, Tj Top max
Tj=Tjmax
Tj150°C
VGE=15V
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Value
Unit
1600
33
47
250
310
37
60
150
V
A
A
A2s
W
°C
1200
27
34
75
50
73
111
±20
10
800
175
V
A
A
A
W
V
µs
V
°C
copyright Vincotech
1
Revision: 2.1

1 page




V23990-P589-C41-PM pdf
V23990-P589-*4*-PM
Output Inverter
Figure 1
Typical output characteristics
IC = f(VCE)
60
50
40
30
20
10
0
0
At
tp =
Tj =
VGE from
12
250 µs
25 °C
7 V to 17 V in steps of 1 V
3
Output inverter IGBT
4
V CE (V)
5
Figure 2
Typical output characteristics
IC = f(VCE)
60
Output inverter IGBT
50
40
30
20
10
0
0
At
tp =
Tj =
VGE from
12
250 µs
150 °C
7 V to 17 V in steps of 1 V
3
4 V CE (V) 5
Figure 3
Typical transfer characteristics
IC = f(VGE)
25
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
IF = f(VF)
25
Output inverter FWD
20 20
15 15
Tj = Tjmax-25°C
10 10
Tj = Tjmax-25°C
Tj = 25°C
Tj = 25°C
55
00
0 2 4 6 8 10 V GE (V) 12
0,0 0,5 1,0 1,5 2,0 V F (V) 2,5
At
tp =
VCE =
250
10
µs
V
At
tp = 250 µs
copyright Vincotech
5
Revision: 2.1

5 Page





V23990-P589-C41-PM arduino
V23990-P589-*4*-PM
Output Inverter
Figure 25
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE)
103
100uS
102 1mS
10mS
100mS
101
DC
100
Output inverter IGBT
10-1
At
D=
Th =
VGE =
Tj =
100
single pulse
80 ºC
±15 V
Tjmax
ºC
101
Figure 27
Short circuit withstand time as a function of
gate-emitter voltage
tsc = f(VGE)
17,5
102 V CE (V) 103
Output inverter IGBT
15
12,5
10
7,5
5
2,5
0
12 13 14 15 16 17
V GE (V)
At
VCE =
Tj
1200
175
V
ºC
Figure 26
Gate voltage vs Gate charge
VGE = f(QGE)
20
18
16
14
12
10
8
6
4
2
0
0 25
At
IC = 25
A
50
Output inverter IGBT
240V
960V
75 100 125
Q g (nC)
Figure 28
Output inverter IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
IC = f(VGE)
250
200
150
100
50
0
12
At
VCE
Tj =
1200
175
14
V
ºC
16
18 20
V GE (V)
copyright Vincotech
11
Revision: 2.1

11 Page







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