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Número de pieza | CR05AS | |
Descripción | LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
Fabricantes | Mitsubishi Electric Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CR05AS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! CR05AS
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
• IT (AV) ........................................................................ 0.5A
• VDRM ..............................................................200V/400V
• IGT ......................................................................... 100µA
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
4.4±0.1
1.6±0.2
1.5±0.1
123
0.5±0.07
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
0.4
+0.03
–0.05
2
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
SOT-89
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
4 (marked “CB”)
200
300
160
200
160
Voltage class
8 (marked “CD”)
400
500
320
400
320
Unit
V
V
V
V
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. With Gate-to-cathode resistance RGK=1kΩ
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=57°C V2
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
0.79
0.5
10
0.4
0.1
0.01
6
6
0.1
–40 ~ +125
–40 ~ +125
48
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
mg
Feb.1999
1 page MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
120
TYPICAL EXAMPLE
Tj = 125°C
100
80
60
40
20
0
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5 Tj = 25°C
3 IH (25°C) = 1mA
2 IGT (25°C) = 25µA
101
7
5
3
2
100
7
5
3
,,,,,,,,,,DIS,,,,,TR,,,,,IBU,,,,,TI,,,,,ON,,,,,TE,,,,,YXPA,,,,,IMCPA,,,,,LLE,,,,,
2
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
120
100
80
60 # 2
40 TYPICAL EXAMPLE
# 1 IGT (25°C)= 10µA
20 # 2 IGT (25°C)= 66µA
Tj = 125°C, RGK = 1kΩ
#1
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
500
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
400
# 1 13µA
# 2 59µA
1.6mA
1.8mA
#1
300
#2
200
100
Tj = 25°C
0
10–1 2 3 5 7 100 2 3 5 7101 2 3 5 7102
GATE TO CATHODE RESISTANCE (kΩ)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7
5
4
#1
TYPICAL EXAMPLE
IGT (25°C)
# 2 # 1 10µA
3 # 2 66µA
2
102
7
5
4
3
2
Tj = 25°C
101
100 2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet CR05AS.PDF ] |
Número de pieza | Descripción | Fabricantes |
CR05AS | LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor |
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