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PDF CR04 Data sheet ( Hoja de datos )
| Número de pieza | CR04 | |
| Descripción | LOW POWER USE GLASS PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CR04 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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CR04AM
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
• IT (AV) ........................................................................ 0.4A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
132
JEDEC : TO-92
APPLICATION
Ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
8 12
400 600
500 720
320 480
400 600
320 480
Unit
V
V
V
V
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. With Gate-to-cathode resistance RGK=1kΩ
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=54°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
0.63
0.4
10
0.4
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
0.23
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Feb.1999
1 page  
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125°C
140 RGK = 1kΩ
120
100
80
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
500
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
400 # 1 25µA 0.9mA
300
200
#1
100
Tj = 25°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
TURN-ON TIME VS. GATE CURRENT
102
7 TYPICAL EXAMPLE
5
3
2
VD = 100V
RL = 47Ω
RGK = 1kΩ
Ta = 25°C
101
7
5
3
2
100
7
5
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT (mA)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
101
7 DISTRIBUTION
5
3
2
100
7
5
3
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,TY,,,,,IPGITC,,,,,(A2L5,,,,,°ECX,,,,,)A=M,,,,,3P5Lµ,,,,,EA
2
10–1
7
5
3
2
RGK = 1kΩ
10–2
–60–40 –20 0
20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
4.0
Tj = 25°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
100 101 102
GATE TRIGGER CURRENT (µA)
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
40
VD = 50V, VR = 50V
35 IT = 2A, RGK = 1kΩ
31122,,,,,,,,505050 ,,,,,,,,DIS,,,,,,,,TR,,,,,,,,IBU,,,,,,,,TI,,,,,,,,ONT,,,,,,,,YP,,,,,,,,IC,,,,,,,,AL,,,,,,,,EX,,,,,,,,AMPLE
0
0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CR04.PDF ] | |
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