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Número de pieza | CR03AM | |
Descripción | LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE | |
Fabricantes | Mitsubishi Electric Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CR03AM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! CR03AM
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
• IT (AV) ........................................................................ 0.3A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
APPLICATION
Leakage protector, timer, gas ignitor
132
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
DC off-state voltage
V1
Voltage class
8 12
400 600
500 800
320 480
400 600
500 800
320 480
Unit
V
V
V
V
V
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. With gate to cathode resistance RGK=1kΩ.
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=47°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
0.47
0.3
20
1.6
0.5
0.1
6
6
0.3
–40 ~ +110
–40 ~ +125
0.23
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Feb.1999
1 page MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
200
RGK = 1kΩ
180
160
140
120
100
Tj = 25°C
80
60
Tj = 110°C
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
500
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
400 # 1 10µA 1.0mA
# 2 26µA 1.1mA
300
#1
#2
200
100
VD = 12V, Tj = 25°C
0
10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
GATE TO CATHODE RESISTANCE (kΩ)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7
5
4
TYPICAL EXAMPLE
IGT (DC)
# 1 16µA
3 # 2 65µA
2
#1
#2
103
7
5
4
3
2
Tj = 25°C
102
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE TRIGGER PULSE WIDTH (µs)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
102
7 RGK = 1kΩ
5
3
2
101
7 DISTRIBUTION
5 TYPICAL EXAMPLE
3
2
100
7
5
3
2
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,IG,,,,,T(2,,,,,5°,,,,,C) =,,,,,35µA
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
Feb.1999
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet CR03AM.PDF ] |
Número de pieza | Descripción | Fabricantes |
CR03AM | LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE | Mitsubishi Electric Semiconductor |
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