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PDF XBS013V1DR-G Data sheet ( Hoja de datos )
| Número de pieza | XBS013V1DR-G | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | Torex Semiconductor | |
| Logotipo |  |
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XBS013V1DR-G
Schottky Barrier Diode, 100mA, 30V Type
FEATURES
Ultra Small Package
Low VF
APPLICATIONS
Low Current Rectification
ETR1618-005
ABSOLUTE MAXIMUM RATINGS
PARMETER
SYMBOL RATINGS
Repetitive Peak Voltage
VRM
30
Reverse Voltage (DC)
VR 30
Forward Current (Average)
Peak Forward Surge Current *1
IF(AV)
IFSM
100
0.5
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -40 +150
*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.
Ta=25
UNITS
V
V
mA
A
PACKAGING INFORMATION
0.30±0.05
0.20±0.03
MARKING RULE
TOP BOTTOM
1 (Product Number)
a,b,c,d,e Lot Number
Unit: mm
PRODUCT NAME
PRODUCT NAME
PACKAGE
XBS013V1DR-G *
USP-2B01
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
SYMBOL
VF1
IR
TEST CONDITIONS
IF=10mA
VR=10V
MIN.
-
-
LIMITS
TYP.
-
-
Ta=25
MAX.
0.37
7
UNITS
V
A
●NOTES ON USE
1. A package of this IC is a surface mounted package 0603 size with backside electrode structure. Compare to other packages, fixation strength
for the electrodes is weak due to its structure. Please keep away from mechanical stress to the product when mounting or after mounting.
2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board
deformation and mechanical stress.
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1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet XBS013V1DR-G.PDF ] | |
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