|
|
PDF V40100PW Data sheet ( Hoja de datos )
| Número de pieza | V40100PW | |
| Descripción | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de V40100PW (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.vishay.com
V40100PW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS®
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-3PW
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
100 V
IFSM
EAS at L = 100 mH
300 A
280 mJ
VF at IF = 20 A
0.61 V
TJ max.
150 °C
Package
TO-3PW
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
EAS
IRRM
dV/dt
TJ, TSTG
V40100PW
100
40
20
300
280
1.0
10 000
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
°C
Revision: 22-Dec-13
1 Document Number: 89179
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet V40100PW.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| V40100P | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |  Vishay Siliconix |
| V40100PG | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix |
| V40100PGW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
| V40100PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |