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PDF MMBT5551 Data sheet ( Hoja de datos )
| Número de pieza | MMBT5551 | |
| Descripción | NPN Surface Mount General Purpose Si-Epi-Planar Transistors | |
| Fabricantes | Diotec | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MMBT5551 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MMBT5550 / MMBT5551
MMBT5550 / MMBT5551
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-05-09
2.9 ±0.1
0.4 3
Type
Code
1
2
1.1
1.9
Dimensions - Maße [mm]
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBT5550 MMBT5551
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO
140 V
160 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
160 V
180 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
6V
Power dissipation – Verlustleistung
Ptot 250 mW 1)
Collector current – Kollektorstrom (dc)
IC 600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 1 mA, VCE = 5 V
MMBT5550
MMBT5551
hFE
hFE
IC = 10 mA, VCE = 5 V
MMBT5550
MMBT5551
hFE
hFE
IC = 50 mA, VCE = 5 V
MMBT5550
MMBT5551
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 10 mA, IB = 1 mA
MMBT5550
MMBT5551
VCEsat
VCEsat
IC = 50 mA, IB = 5 mA
MMBT5550
MMBT5551
VCEsat
VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
60 –
80 –
–
–
60 – 250
80 – 250
20 –
30 –
–
–
– – 0.15 V
– – 0.15 V
– – 0.25 V
– – 0.20 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT5551.PDF ] | |
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