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PDF MMBT3906W Data sheet ( Hoja de datos )

Número de pieza MMBT3906W
Descripción General Purpose Transistor
Fabricantes SeCoS　
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Elektronische Bauelemente
MMBT3906W
PNP Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
· Epitaxial Planar Die Construction
· Complementary NPN Type Available
(MMBT3904W)
· Ideal for Medium Power Amplification and
Switching
"Lead free is available"
A
L
COLLECTOR
3
3
Top View
BS
1
BASE
2
EMITTER
1
2
SC-70
SOT-323
V
D
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3906W = 2A, K5N
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
G
C
H
K
Value
–40
–40
–5.0
–200
Unit
Vdc
Vdc
Vdc
mAdc
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-323(SC-70)
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
J V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
V(BR)CEO
Vdc
–40 —
V(BR)CBO
Vdc
–40 —
V(BR)EBO
Vdc
–5.0 —
IBL nAdc
— –50
ICEX
nAdc
— –50
REM : Thermal Clad is a trademark of the Bergquist Company.
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 5

1 page




MMBT3906W pdf
Elektronische Bauelemente
MMBT3906W
PNP Silicon
General Purpose Transistor
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
1.0 +25°C
0.7
– 55°C
0.5
0.3
0.2
VCE = 1.0 V
0.1
0.1
1.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, Collector Current (mA)
Figure 13. DC Current Gain
0.8 IC = 1.0 mA
0.6
10 mA
30 mA
20 30
50 70 100
200
TJ = 25°C
100 mA
0.4
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, Base Current (mA)
Figure 14. Collector Saturation Region
2.0 3.0
5.0 7.0 10
1.0
TJ = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0 2.0 5.0 10
20
50
IC, Collector Current (mA)
100 200
Figure 15. “ON” Voltages
1.0
0.5 qVC FOR VCE(sat)
0
– 0.5
– 1.0
– 1.5 qVB FOR VBE(sat)
+25°C TO +125°C
– 55°C TO +25°C
+25°C TO +125°C
– 55°C TO +25°C
– 2.0
0
20 40 60 80 100 120 140 160 180 200
IC, Collector Current (mA)
Figure 16. Temperature Coefficients
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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