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Número de pieza | MMBT3904W | |
Descripción | General Purpose Transistor | |
Fabricantes | SeCoS | |
Logotipo | ||
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No Preview Available ! Elektronische Bauelemente
MMBT3904W
NPN Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
· Epitaxial Planar Die Construction
· Complementary PNP Type Available
(MMBT3906W)
· Ideal for Medium Power Amplification and
Switching
COLLECTOR
3
3
A
L
3
Top View
12
BS
VG
1
BASE
2
EMITTER
1
2
SC-70
SOT-323
D
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3904W = 1A, K2N
RqJA
TJ, Tstg
C
H
K
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Max
200
1.6
625
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-323(SC-70)
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
J L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
V(BR)CEO
40
— Vdc
V(BR)CBO
60
— Vdc
V(BR)EBO
6.0
—
Vdc
IBL — 50 nAdc
ICEX
—
50 nAdc
REM : Thermal Clad is a registered trademark of the Berquist Company.
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. B
Any changing of specification will not be informed individual
Page 1 of 6
1 page Elektronische Bauelemente
MMBT3904W
NPN Silicon
General Purpose Transistor
300
200
100
70
50
30
0.1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
50
20
10
5
0.2 0.3 0.5 1.0 2.0 3.0
I C, Collector Current (mA)
Figure 11. Current Gain
5.0
10
2
1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
IC, Collector Current (mA)
Figure 12. Output Admittance
10
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, Collector Current (mA)
5.0
Figure 13. Input Impedance
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0
I C, Collector Current (mA)
5.0
Figure 14. Voltage Feedback Ratio
10
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
VCE = 1.0 V
0.1
0.1
0.2 0.3
0.5 0.7 1.0
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. B
2.0 3.0
5.0 7.0 10
IC, Collector Current (mA)
Figure 15. DC Current Gain
20 30
50 70 100
200
Any changing of specification will not be informed individual
Page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MMBT3904W.PDF ] |
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