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PDF D882S Data sheet ( Hoja de datos )
| Número de pieza | D882S | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
D882S
NPN Plastic Encapsulated Transistor
FEATURES
Power Dissipation
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
GH
TO-92
CLASSIFICATION OF hFE
Rank
Range
R
60-120
0
100-200
Y
160-320
GR
200-400
J
AD
B
K
E CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Emitter
Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
40
30
6
3
625
150, -55~150
Base
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
40
30
6
-
-
-
60
-
-
50
- -V
- -V
- -V
- 1 μA
- 10 μA
- 1 μA
- 400
- 0.5 V
- 1.5 V
- - MHz
TEST CONDITION
IC=100 μA, IE = 0 A
IC=10 mA, IB = 0 A
IE=100 μA, IC = 0A
VCB=40 V, IE = 0 A
VCE=30 V, IB = 0 A
VEB=6 V, IC =0 A
VCE=2 V, IC=1 A
IC=2 A, IB=0.2 A
IC=2 A, IB=0.2 A
VCE = 5 V, IC = 0.1 A, f=10 MHz
http://www.SeCoSGmbH.com/
08-Oct-2010 Rev. A
Any changes of specification will not be informed individually.
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